Selected properties of a-C:H PACVD coatings

被引：3

作者：

Cerny, F. ^{[1
]}

Jech, V. ^{[1
]}

Konvickova, S. ^{[1
]}

Suchanek, J. ^{[1
]}

机构：

[1] Czech Tech Univ, Fac Mech Engn, Prague 16607, Czech Republic

来源：

APPLIED SURFACE SCIENCE | 2009年 / 256卷 / 03期

关键词：

a-C:H films; rf PACVD; Film growth rate; Electrical passivation; DIAMOND-LIKE CARBON; TRIBOLOGICAL BEHAVIOR; THERMAL-STABILITY; FILMS; DEPOSITION;

D O I：

10.1016/j.apsusc.2009.04.187

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

a-C:H films were deposited by rf PACVD from methane and their growth rate, thermal treatment, morphology, adhesion and electrical passivation properties were investigated. Deposition at room temperature gave the highest film growth rates. The Raman spectra obtained for a-C: H films indicated that the D peak becomes more pronounced as the annealing temperature grows higher. The rf plasma produced a-C: H passivation films which are sufficiently insulating at voltages up to ca. 2200 V. (C) 2009 Elsevier B. V. All rights reserved.

引用

页码：S22 / S25

页数：4

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