Permselective SPEEK/Nafion Composite-Coated Separator as a Potential Polysulfide Crossover Barrier Layer for Li-S Batteries
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作者:
Babu, Dasari Bosu
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CSIR Cent Electrochem Res Inst, Chennai Unit, CSIR Madras Complex, Madras 600113, Tamil Nadu, India
CSIR CECRI, Acad Sci & Innovat Res AcSIR, Karaikkudi 630003, Tamil Nadu, IndiaCSIR Cent Electrochem Res Inst, Chennai Unit, CSIR Madras Complex, Madras 600113, Tamil Nadu, India
Babu, Dasari Bosu
[1
,2
]
Giribabu, Krishnan
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CSIR Cent Electrochem Res Inst, Chennai Unit, CSIR Madras Complex, Madras 600113, Tamil Nadu, IndiaCSIR Cent Electrochem Res Inst, Chennai Unit, CSIR Madras Complex, Madras 600113, Tamil Nadu, India
Giribabu, Krishnan
[1
]
Ramesha, Kannadka
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CSIR Cent Electrochem Res Inst, Chennai Unit, CSIR Madras Complex, Madras 600113, Tamil Nadu, India
CSIR CECRI, Acad Sci & Innovat Res AcSIR, Karaikkudi 630003, Tamil Nadu, IndiaCSIR Cent Electrochem Res Inst, Chennai Unit, CSIR Madras Complex, Madras 600113, Tamil Nadu, India
Ramesha, Kannadka
[1
,2
]
机构:
[1] CSIR Cent Electrochem Res Inst, Chennai Unit, CSIR Madras Complex, Madras 600113, Tamil Nadu, India
[2] CSIR CECRI, Acad Sci & Innovat Res AcSIR, Karaikkudi 630003, Tamil Nadu, India
Minimizing the shuttle effect by constraining polysulfides to the cathode compartment and activating the passive layer between cathode and separator are highly important for improving the Li-S cell performance, Coulombic efficiency, and cycle life. Here, we report a submicron thin coating of permselective sulfonated poly(ether ether ketone) (SPEEK) composite layer on the separator that would reduce polysulfide crossover, imparting a significant improvement in cycle life. It is observed that SPEEK increases the stability, and adding Nafion improves the capacity value. Among different ratios of Nafion and SPEEK (25:75, 50:50, and 75:25), the composite with a SPEEK/Nafion ratio of 50:50 showed a controlled shuttle effect with a stable cell capacity of 600 mA h g(-1) up to 300 cycles. This modified separator with permselective coatings not only reduces the polysulfide shuttle but also improves the wettability and interfacial contact, which results in an improvement in average cell potential and lithium diffusivity. It is demonstrated here that the combination of functional (ionomer coating on separator) and nonfunctional (extra cathode layer) physical barriers effectively suppresses the polysulfide crossover and improves the electrochemical performance of Li-S batteries. The cell shows an initial capacity of 1300 mA h g(-1) and a capacity retention of 650 mA h g(-1) over 500 cycles with a 6 mg/cm(2) sulfur loading.
机构:
CSIR Cent Electrochem Res Inst, Chennai Unit, CSIR Madras Complex, Chennai 600113, Tamil Nadu, India
CSIR CECRI, Acad Sci & Innovat Res AcSIR, Karaikkudi 630003, Tamil Nadu, IndiaCSIR Cent Electrochem Res Inst, Chennai Unit, CSIR Madras Complex, Chennai 600113, Tamil Nadu, India
Babu, D. Bosu
;
Ramesha, K.
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CSIR Cent Electrochem Res Inst, Chennai Unit, CSIR Madras Complex, Chennai 600113, Tamil Nadu, India
CSIR CECRI, Acad Sci & Innovat Res AcSIR, Karaikkudi 630003, Tamil Nadu, IndiaCSIR Cent Electrochem Res Inst, Chennai Unit, CSIR Madras Complex, Chennai 600113, Tamil Nadu, India
机构:
Samsung SDI Co Ltd, Ctr Corp Res & Dev, Yongin 449577, Gyeonggi Do, South KoreaSamsung SDI Co Ltd, Ctr Corp Res & Dev, Yongin 449577, Gyeonggi Do, South Korea
Cheon, SE
;
Choi, SS
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Samsung SDI Co Ltd, Ctr Corp Res & Dev, Yongin 449577, Gyeonggi Do, South KoreaSamsung SDI Co Ltd, Ctr Corp Res & Dev, Yongin 449577, Gyeonggi Do, South Korea
Choi, SS
;
Han, JS
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Samsung SDI Co Ltd, Ctr Corp Res & Dev, Yongin 449577, Gyeonggi Do, South KoreaSamsung SDI Co Ltd, Ctr Corp Res & Dev, Yongin 449577, Gyeonggi Do, South Korea
Han, JS
;
Choi, YS
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Samsung SDI Co Ltd, Ctr Corp Res & Dev, Yongin 449577, Gyeonggi Do, South KoreaSamsung SDI Co Ltd, Ctr Corp Res & Dev, Yongin 449577, Gyeonggi Do, South Korea
Choi, YS
;
Jung, BH
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Samsung SDI Co Ltd, Ctr Corp Res & Dev, Yongin 449577, Gyeonggi Do, South KoreaSamsung SDI Co Ltd, Ctr Corp Res & Dev, Yongin 449577, Gyeonggi Do, South Korea
Jung, BH
;
Lim, HS
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Samsung SDI Co Ltd, Ctr Corp Res & Dev, Yongin 449577, Gyeonggi Do, South KoreaSamsung SDI Co Ltd, Ctr Corp Res & Dev, Yongin 449577, Gyeonggi Do, South Korea
机构:
Univ Texas Austin, Mat Sci & Engn Program & Texas Mat Inst, Austin, TX 78712 USAUniv Texas Austin, Mat Sci & Engn Program & Texas Mat Inst, Austin, TX 78712 USA
Chung, Sheng-Heng
;
Han, Pauline
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Univ Texas Austin, Mat Sci & Engn Program & Texas Mat Inst, Austin, TX 78712 USAUniv Texas Austin, Mat Sci & Engn Program & Texas Mat Inst, Austin, TX 78712 USA
Han, Pauline
;
Manthiram, Arumugam
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Univ Texas Austin, Mat Sci & Engn Program & Texas Mat Inst, Austin, TX 78712 USAUniv Texas Austin, Mat Sci & Engn Program & Texas Mat Inst, Austin, TX 78712 USA
机构:
CSIR Cent Electrochem Res Inst, Chennai Unit, CSIR Madras Complex, Chennai 600113, Tamil Nadu, India
CSIR CECRI, Acad Sci & Innovat Res AcSIR, Karaikkudi 630003, Tamil Nadu, IndiaCSIR Cent Electrochem Res Inst, Chennai Unit, CSIR Madras Complex, Chennai 600113, Tamil Nadu, India
Babu, D. Bosu
;
Ramesha, K.
论文数: 0引用数: 0
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机构:
CSIR Cent Electrochem Res Inst, Chennai Unit, CSIR Madras Complex, Chennai 600113, Tamil Nadu, India
CSIR CECRI, Acad Sci & Innovat Res AcSIR, Karaikkudi 630003, Tamil Nadu, IndiaCSIR Cent Electrochem Res Inst, Chennai Unit, CSIR Madras Complex, Chennai 600113, Tamil Nadu, India
机构:
Samsung SDI Co Ltd, Ctr Corp Res & Dev, Yongin 449577, Gyeonggi Do, South KoreaSamsung SDI Co Ltd, Ctr Corp Res & Dev, Yongin 449577, Gyeonggi Do, South Korea
Cheon, SE
;
Choi, SS
论文数: 0引用数: 0
h-index: 0
机构:
Samsung SDI Co Ltd, Ctr Corp Res & Dev, Yongin 449577, Gyeonggi Do, South KoreaSamsung SDI Co Ltd, Ctr Corp Res & Dev, Yongin 449577, Gyeonggi Do, South Korea
Choi, SS
;
Han, JS
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机构:
Samsung SDI Co Ltd, Ctr Corp Res & Dev, Yongin 449577, Gyeonggi Do, South KoreaSamsung SDI Co Ltd, Ctr Corp Res & Dev, Yongin 449577, Gyeonggi Do, South Korea
Han, JS
;
Choi, YS
论文数: 0引用数: 0
h-index: 0
机构:
Samsung SDI Co Ltd, Ctr Corp Res & Dev, Yongin 449577, Gyeonggi Do, South KoreaSamsung SDI Co Ltd, Ctr Corp Res & Dev, Yongin 449577, Gyeonggi Do, South Korea
Choi, YS
;
Jung, BH
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Samsung SDI Co Ltd, Ctr Corp Res & Dev, Yongin 449577, Gyeonggi Do, South KoreaSamsung SDI Co Ltd, Ctr Corp Res & Dev, Yongin 449577, Gyeonggi Do, South Korea
Jung, BH
;
Lim, HS
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机构:
Samsung SDI Co Ltd, Ctr Corp Res & Dev, Yongin 449577, Gyeonggi Do, South KoreaSamsung SDI Co Ltd, Ctr Corp Res & Dev, Yongin 449577, Gyeonggi Do, South Korea
机构:
Univ Texas Austin, Mat Sci & Engn Program & Texas Mat Inst, Austin, TX 78712 USAUniv Texas Austin, Mat Sci & Engn Program & Texas Mat Inst, Austin, TX 78712 USA
Chung, Sheng-Heng
;
Han, Pauline
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机构:
Univ Texas Austin, Mat Sci & Engn Program & Texas Mat Inst, Austin, TX 78712 USAUniv Texas Austin, Mat Sci & Engn Program & Texas Mat Inst, Austin, TX 78712 USA
Han, Pauline
;
Manthiram, Arumugam
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机构:
Univ Texas Austin, Mat Sci & Engn Program & Texas Mat Inst, Austin, TX 78712 USAUniv Texas Austin, Mat Sci & Engn Program & Texas Mat Inst, Austin, TX 78712 USA