Hydrogen dynamics and light-induced structural changes in hydrogenated amorphous silicon

被引:19
作者
Abtew, T. A. [1 ]
Drabold, D. A. [1 ]
机构
[1] Ohio Univ, Dept Phys & Astron, Athens, OH 45701 USA
来源
PHYSICAL REVIEW B | 2006年 / 74卷 / 08期
基金
美国国家科学基金会;
关键词
D O I
10.1103/PhysRevB.74.085201
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We use accurate first-principles methods to study the network dynamics of hydrogenated amorphous silicon, including the motion of hydrogen. In addition to studies of atomic dynamics in the electronic ground state, we also adopt a simple procedure to track the H dynamics in light-excited states. Consistent with recent experiments and computer simulations, we find that dihydride structures are formed for dynamics in the light-excited states, and we give explicit examples of pathways to these states. Our simulations appear to be consistent with aspects of the Staebler-Wronski effect, such as the light-induced creation of well-separated dangling bonds.
引用
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页数:8
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