High-Performance Self-Aligned Top-Gate Amorphous InGaZnO TFTs With 4 nm-Thick Atomic-Layer-Deposited AlOx Insulator

被引：16

作者：

Li, Jiye ^{[1
]}

Zhang, Yuqing ^{[2
]}

Wang, Jialiang ^{[1
]}

Yang, Huan ^{[1
]}

Zhou, Xiaoliang ^{[1
]}

Chan, Mansun ^{[2
]}

Wang, Xinwei ^{[1
]}

Lu, Lei ^{[1
]}

Zhang, Shengdong ^{[1
,3
]}

机构：

[1] Peking Univ, Sch Elect & Comp Engn, Shenzhen 518055, Peoples R China

[2] Hong Kong Univ Sci & Technol, Dept Elect & Comp Engn, Hong Kong, Peoples R China

[3] Peking Univ, Sch Elect Engn & Comp Sci, Beijing 100871, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 2022年 / 43卷 / 05期

关键词：

a-IGZO; self-aligned top-gate; high-kappa dielectric; ALD; ultrathin AlOx; equivalent oxide thickness; low operation voltage; bias stability; FILM TRANSISTORS; TEMPERATURE; POWER;

D O I：

10.1109/LED.2022.3160514

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Electrical characteristics of self-aligned top-gate (SATG) amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) with 4 nm-thick atomic-layer-deposited (ALD) AlOx gate insulator (GI) are investigated. It is demonstrated that the SATG a-IGZO TFTs present high-performance metrics including a near-ideal subthreshold swing (SS) of 60.9 mV/dec, a low off-state current below 10(-12) A, a positive V-th of 0.1 V, and a decent mobility of 14.1 cm(2)/V . s. In addition, the TFTs exhibit negligible V-th shifts less than 0.02 V against electrical bias stresses. Both high performance and excellent stability are thus simultaneously achieved for the ultrathin GI of amorphous oxide semiconductor (AOS) TFTs.

引用

页码：729 / 732

页数：4

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