Effect of an initially sulphur-rich sprayed solution on CuInS2 thin films

被引：12

作者：

Bihri, H ^{[1
]}

Abd-Lefdil, M ^{[1
]}

机构：

[1] Univ Mohammed V, Fac Sci, Dept Phys, Phys Mat Lab, Rabat, Morocco

来源：

THIN SOLID FILMS | 1999年 / 354卷 / 1-2期

关键词：

semiconductors; structural properties; optical properties; conductivity;

D O I：

10.1016/S0040-6090(99)00433-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Copper indium disulphide CuInS2 thin films were prepared by spray pyrolysis technique. Improvement of CuInS2 films stoichiometry was found by increasing the sulphur content in the sprayed solution. X-ray diffraction, transmission and electrical resistivity results are discussed as a function of the film composition. The films were single-phase and showed a preferred orientation (112), with chalcopyrite characteristic peak (103) for high sulphur content. P-type CuInS2 with a conductivity value in the range 10(-1)-10(-3) Omega(-1) cm(-1) and a gap energy of about 1.4 eV were obtained. (C) 1999 Elsevier Science S.A. All rights reserved.

引用

页码：5 / 8

页数：4

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