Perpendicular spin transfer torque magnetic random access memories with high spin torque efficiency and thermal stability for embedded applications (invited)

被引：215

作者：

Thomas, Luc ^{[1
]}

Jan, Guenole ^{[1
]}

Zhu, Jian ^{[1
]}

Liu, Huanlong ^{[1
]}

Lee, Yuan-Jen ^{[1
]}

Le, Son ^{[1
]}

Tong, Ru-Ying ^{[1
]}

Pi, Keyu ^{[1
]}

Wang, Yu-Jen ^{[1
]}

Shen, Dongna ^{[1
]}

He, Renren ^{[1
]}

Haq, Jesmin ^{[1
]}

Teng, Jeffrey ^{[1
]}

Lam, Vinh ^{[1
]}

Huang, Kenlin ^{[1
]}

Zhong, Tom ^{[1
]}

Torng, Terry ^{[1
]}

Wang, Po-Kang ^{[1
]}

机构：

[1] TDK Headway Technol Inc, Milpitas, CA 95035 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2014年 / 115卷 / 17期

关键词：

TUNNEL-JUNCTIONS; ROOM-TEMPERATURE; HIGH-SPEED; MAGNETORESISTANCE; COERCIVITY; ANISOTROPY;

D O I：

10.1063/1.4870917

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Magnetic random access memories based on the spin transfer torque phenomenon (STT-MRAMs) have become one of the leading candidates for next generation memory applications. Among the many attractive features of this technology are its potential for high speed and endurance, read signal margin, low power consumption, scalability, and non-volatility. In this paper, we discuss our recent results on perpendicular STT-MRAM stack designs that show STT efficiency higher than 5k(B)T/mu A, energy barriers higher than 100 k(B)T at room temperature for sub-40nm diameter devices, and tunnel magnetoresistance higher than 150%. We use both single device data and results from 8 Mb array to demonstrate data retention sufficient for automotive applications. Moreover, we also demonstrate for the first time thermal stability up to 400 degrees C exceeding the requirement of Si CMOS back-end processing, thus opening the realm of non-volatile embedded memory to STT-MRAM technology. (C) 2014 AIP Publishing LLC.

引用

页数：6

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