Dependence of fractal conductance fluctuations on soft-wall profile in a double-layer semiconductor billiard

被引：12
作者：
Micolich, AP [4 ]
Taylor, RP
Davies, AG
Fromhold, TM
Linke, H
Macks, LD
Newbury, R
Ehlert, A
Tribe, WR
Linfield, EH
Ritchie, DA
机构：
[1] Univ Oregon, Dept Phys, Eugene, OR 97403 USA
[2] Univ Cambridge, Cavendish Lab, Semicond Phys Grp, Cambridge CB3 0HE, England
[3] Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, England
[4] Univ New S Wales, Sch Phys, Sydney, NSW 2052, Australia
来源：
APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 23期
关键词：
D O I：
10.1063/1.1485103
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We present a semiconductor system featuring two billiards located one on top of the other. We use this system to study the dependence of fractal conductance fluctuations on soft-wall potential profile and show the fluctuations to be surprisingly robust to changes in profile. (C) 2002 American Institute of Physics.
引用
收藏
页码：4381 / 4383
页数：3
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