Two-dimensional computational model for electrochemical micromachining with ultrashort voltage pulses

被引:28
作者
Kenney, JA
Hwang, GS [1 ]
Shin, W
机构
[1] Univ Texas, Dept Chem Engn, Austin, TX 78712 USA
[2] Sogang Univ, Dept Chem, Seoul 121742, South Korea
关键词
D O I
10.1063/1.1738937
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have developed a computational model to simulate electrochemical micromachining of conducting substrates with ultrashort voltage pulses. This theoretical approach integrates (i) a circuit model to describe charging and discharging of electrochemical double layers and electric field variation in electrolytes and (ii) the level set method to simulate feature profile evolution during electrochemical etching. Our simulation results of transient current responses and etch profile evolution are qualitatively in agreement with experimental observations. From our simulations, we find that the resolution of etched features is a strong function of the substrate double layer capacity which may be controlled by electrolyte concentration and pulse duration. (C) 2004 American Institute of Physics.
引用
收藏
页码:3774 / 3776
页数:3
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