Impact of boron penetration on gate oxide reliability and device lifetime in p+-poly PMOSFETs

被引：11

作者：

Kim, BY ^{[1
]}

Liu, IM ^{[1
]}

Luan, HF ^{[1
]}

Gardner, M ^{[1
]}

Fulford, J ^{[1
]}

Kwong, DL ^{[1
]}

机构：

[1] ADV MICRO DEVICES INC,AUSTIN,TX 78741

来源：

MICROELECTRONIC ENGINEERING | 1997年 / 36卷 / 1-4期

关键词：

D O I：

10.1016/S0167-9317(97)00071-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effects of boron penetration on device performance and reliability of p(+)-poly PMOSFETs are investigated extensively with different RTA drive-in conditions. High drive-in temperature causes significant boron-penetration induced mobility degradation in PMOSFETs, resulting degraded device performance. Boron penetration enhances charge trapping in oxide and interface state generation at Si/SiO2 interfaces under F-N stress. Gate oxide reliability and device lifetime in the PMOSFETs due to this degradation are systematically studied.

引用

页码：313 / 316

页数：4

共 6 条

[1] CORRELATION OF TRAP GENERATION TO CHARGE-TO-BREAKDOWN (QBD) - A PHYSICAL-DAMAGE MODEL OF DIELECTRIC-BREAKDOWN [J].