Dopant imaging and profiling of wide-band-gap devices by Secondary Electron Potential Contrast

被引：0

作者：

Buzzo, M. ^{[1
]}

Ciappa, M. ^{[2
]}

Stangoni, M. ^{[2
]}

Fichner, W. ^{[2
]}

机构：

[1] Infineon Technol, Qual Management & Failure Anal, Villach, Australia

[2] Swiss Fed Inst Technol, Integrated Syst Lab, Zurich, Switzerland

来源：

2006 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 44TH ANNUAL | 2006年

关键词：

D O I：

10.1109/RELPHY.2006.251279

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Secondary Electron Potential Contrast in Scanning Electron Microscopy is proposed as the method of choice for two-dimensional dopant imaging and profiling of wide-band-gap semiconductor devices, including SiC MOSFETs, SiC JFETs, quantum wells, and VCSEL lasers. After a review of the physical principles governing the signal generation, the quantitative capabilities of this technique are assessed with applications to test structures and real devices.

引用

页码：560 / +

页数：2