Comparison of continuous-wave terahertz wave generation and bias-field-dependent saturation in GaAs:O and LT-GaAs antennas

被引：10
作者：
Chen, Kejian [1 ,2 ]
Li, Yu-tai [3 ,4 ]
Yang, Mong-huan [3 ,4 ]
Cheung, Wing Yiu [1 ,2 ]
Pan, Ci-Ling [1 ,2 ,3 ,4 ]
Chan, Kam Tai [1 ,2 ]
机构：
[1] Chinese Univ Hong Kong, Dept Elect Engn, Hong Kong, Hong Kong, Peoples R China
[2] Chinese Univ Hong Kong, Ctr Adv Res Photon, Hong Kong, Hong Kong, Peoples R China
[3] Natl Chiao Tung Univ, Dept Photon, Hsinchu 30010, Taiwan
[4] Natl Chiao Tung Univ, Inst Electroopt Engn, Hsinchu 30010, Taiwan
来源：
OPTICS LETTERS | 2009年 / 34卷 / 07期
关键词：
TEMPERATURE-GROWN GAAS; ION-IMPLANTED GAAS; EMISSION PROPERTIES; THZ; PHOTOCONDUCTORS; RADIATION;
D O I：
10.1364/OL.34.000935
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Terabertz wave (THz) photoconductive (PC) antennas were fabricated on oxygen-implanted GaAs (GaAs:O) and low-temperature-grown GaAs (LT-GaAs). The measured cw THz power at 0.358 THz from the GaAs:O antenna is about twice that from the LT-GaAs antenna under the same testing conditions, with the former showing no saturation up to a bias of 40 kV/cm, while the latter is already beginning to saturate at 20 kV/cm. A modified theoretical model incorporating bias-field-dependent electron saturation velocity is employed to explain the results. It shows that GaAs:O exhibits a higher electron saturation velocity, which may be further exploited to generate even larger THz powers by reducing the ion dosage and optimizing the annealing process in GaAs:O. (C) 2009 Optical Society of America
引用
收藏
页码：935 / 937
页数：3
相关论文
共 21 条
[1]   COHERENT MILLIMETER-WAVE GENERATION BY HETERODYNE CONVERSION IN LOW-TEMPERATURE-GROWN GAAS PHOTOCONDUCTORS [J].
BROWN, ER ;
SMITH, FW ;
MCINTOSH, KA .
JOURNAL OF APPLIED PHYSICS, 1993, 73 (03) :1480-1484
[2]  
CHEN KJ, 2007, C LAS EL PAC RIM 200
[3]   HIGH-VOLTAGE PICOSECOND PHOTOCONDUCTOR SWITCH BASED ON LOW-TEMPERATURE-GROWN GAAS [J].
FRANKEL, MY ;
WHITAKER, JF ;
MOUROU, GA ;
SMITH, FW ;
CALAWA, AR .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1990, 37 (12) :2493-2498
[4]   Ultrafast carrier trapping in oxygen-doped metal-organic vapor phase epitaxy GaAs [J].
Kang, JU ;
Frankel, MY ;
Huang, JW ;
Kuech, TF .
APPLIED PHYSICS LETTERS, 1997, 70 (12) :1560-1562
[5]   IDENTIFICATION OF OXYGEN-RELATED MIDGAP LEVEL IN GAAS [J].
LAGOWSKI, J ;
LIN, DG ;
AOYAMA, T ;
GATOS, HC .
APPLIED PHYSICS LETTERS, 1984, 44 (03) :336-338
[6]   Nonlinear optical absorption and temporal response of arsenic- and oxygen-implanted GaAs [J].
Lederer, MJ ;
Luther-Davies, B ;
Tan, HH ;
Jagadish, C ;
Haiml, M ;
Siegner, U ;
Keller, U .
APPLIED PHYSICS LETTERS, 1999, 74 (14) :1993-1995
[7]  
Lee K., 1993, SEMICONDUCTOR DEVICE
[8]   Ultrafast response of multi-energy proton-bombarded GaAs photoconductors [J].
Lin, GR ;
Pan, CL .
OPTICAL AND QUANTUM ELECTRONICS, 2000, 32 (4-5) :553-571
[9]   THz radiation emission properties of multienergy arsenic-ion-implanted GaAs and semi-insulating GaAs based photoconductive antennas [J].
Liu, TA ;
Tani, M ;
Pan, CL .
JOURNAL OF APPLIED PHYSICS, 2003, 93 (05) :2996-3001
[10]   Investigation of ultrashort photocarrier relaxation times in low-temperature-grown GaAs [J].
McIntosh, KA ;
Nichols, KB ;
Verghese, S ;
Brown, ER .
APPLIED PHYSICS LETTERS, 1997, 70 (03) :354-356
123