Sol-gel fabrication of lithium doped zinc oxide thin films

被引:1
|
作者
Oral, AY [1 ]
Aslan, MH
Bahsi, ZB
Basaran, E
机构
[1] Gebze Inst Technol, Dept Mat Sci & Engn, TR-41400 Gebze, Kocaeli, Turkey
[2] Gebze Inst Technol, Dept Phys, TR-41400 Gebze, Kocaeli, Turkey
来源
EURO CERAMICS VIII, PTS 1-3 | 2004年 / 264-268卷
关键词
Li doped zinc oxide; sol-gel; thin film; transparent-conductive oxide;
D O I
10.4028/www.scientific.net/KEM.264-268.415
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Li doped zinc oxide thin films were deposited on glass substrates by a sol-gel technique. Acetates of zinc and lithium were used as metal sources. A homogeneous and stable solution was prepared by dissolving acetates in the solution of 2-propanol and ethanolamine. ZnO:Li thin films were obtained after preheating the spin coated films at 250degreesC for I minute after each coating. A post annealing between 450-600degreesC was applied after the deposition of the last layers. XRD analysis revealed ZnO with zincite structure (Card no: 36-1451) in all films. The thickness of the films was measured as 75 nm per layer. The optical band gap of the films increased as doping concentration of Li increased and decreased as the post-annealing temperature increased.
引用
收藏
页码:415 / 418
页数:4
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