Effect of electron beam irradiation on thermally evaporated Ge2Sb2Te5 thin films

被引：0
作者：
Sarkar, D. [1 ]
Sanjeev, G. [2 ]
Bhat, T. N. [3 ,4 ]
Mahesha, M. G. [1 ]
机构：
[1] Manipal Univ, Manipal Inst Technol, Dept Phys, Manipal 576104, Karnataka, India
[2] Mangalore Univ, Dept Phys, Mangalore 574119, India
[3] ASTAR, Inst Mat Res & Engn, Singapore 117602, Singapore
[4] Mangalore Univ, Dept Mat Sci, Mangalore 574119, India
来源：
JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS | 2018年 / 20卷 / 1-2期
关键词：
GST; Phase change memory; Structural property; Optical property; Electrical property; Raman spectroscopy; PHASE-CHANGE MEMORY; RAMAN-SCATTERING; GETE; MECHANISM;
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Ge2Sb2Te5(GST) thin films have been grown by thermal evaporation technique. The grown films have been irradiated with electron beam at various doses. As-deposited and irradiated films have been characterized for their structural, optical and electrical properties. Raman spectra has been recorded to get more insight on structural rearrangement that happened during the irradiation process. Detailed analysis of these data has been made to explore the behavior of system under electron irradiation environment.
引用
收藏
页码：84 / 89
页数：6
相关论文
共 24 条
[1]   Raman scattering study of GeTe and Ge2Sb2Te5 phase-change materials [J].
Andrikopoulos, K. S. ;
Yannopoulos, S. N. ;
Kolobov, A. V. ;
Fons, P. ;
Tominaga, J. .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 2007, 68 (5-6) :1074-1078
[2]   Raman scattering study of the a-GeTe structure and possible mechanism for the amorphous to crystal transition [J].
Andrikopoulos, KS ;
Yannopoulos, SN ;
Voyiatzis, GA ;
Kolobov, AV ;
Ribes, M ;
Tominaga, J .
JOURNAL OF PHYSICS-CONDENSED MATTER, 2006, 18 (03) :965-979
[3]  
[Anonymous], P IEEE INT C IC DES
[4]  
Bagley B.G., 1974, Amorphous and liquid semiconductors
[5]   Photo-induced optical activity in phase-change memory materials [J].
Borisenko, Konstantin B. ;
Shanmugam, Janaki ;
Williams, Benjamin A. O. ;
Ewart, Paul ;
Gholipour, Behrad ;
Hewak, Daniel W. ;
Hussain, Rohanah ;
Javorfi, Tamas ;
Siligardi, Giuliano ;
Kirkland, Angus I. .
SCIENTIFIC REPORTS, 2015, 5
[6]   Electrical Resistivity of Liquid Ge2Sb2Te5 Based on Thin-Film and Nanoscale Device Measurements [J].
Cil, Kadir ;
Dirisaglik, Faruk ;
Adnane, Lhacene ;
Wennberg, Maren ;
King, Adrienne ;
Faraclas, Azer ;
Akbulut, Mustafa B. ;
Zhu, Yu ;
Lam, Chung ;
Gokirmak, Ali ;
Silva, Helena .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2013, 60 (01) :433-437
[7]  
Fantini A., 2009, P IEEE INT MEM WORKS
[8]   Phase change in Ge2Sb2Te5 films investigated by coherent phonon spectroscopy [J].
Först, M ;
Dekorsy, T ;
Trappe, C ;
Laurenzis, M ;
Kurz, H ;
Béchevet, B .
APPLIED PHYSICS LETTERS, 2000, 77 (13) :1964-1966
[9]   Crystallization characteristics of Mg-doped Ge2Sb2Te5 films for phase change memory applications [J].
Fu, Jing ;
Shen, Xiang ;
Nie, Qiuhua ;
Wang, Guoxiang ;
Wu, Liangcai ;
Dai, Shixun ;
Xu, Tiefeng ;
Wang, R. P. .
APPLIED SURFACE SCIENCE, 2013, 264 :269-272
[10]   Study of Ge-Sb-Te and Ge-Te cocktail sources to improve an efficiency of multi-line CVD for phase change memory [J].
Jeong, Jin Hwan ;
Park, Jun Hyuk ;
Lee, Yeong Min ;
Hwang, Uk ;
Kim, Hyung Keun ;
Kil, Deok Sin ;
Choi, Doo Jin .
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2015, 40 :50-57
123