A Structural Characterization of GaAs MBE Grown on Si Pillars

被引：3

作者：

Frigeri, C. ^{[1
]}

Bietti, S. ^{[2
,3
]}

Scaccabarozzi, A. ^{[2
,3
]}

Bergamaschini, R. ^{[2
,3
]}

Falub, C. V. ^{[4
]}

Grillo, V. ^{[1
]}

Bollani, M. ^{[5
]}

Bonera, E. ^{[2
,3
]}

Niedermann, P. ^{[6
]}

von Kaenel, H. ^{[4
]}

Sanguinetti, S. ^{[2
,3
]}

Miglio, L. ^{[2
,3
]}

机构：

[1] CNR IMEM Inst, I-43100 Parma, Italy

[2] L Ness, I-20125 Milan, Italy

[3] Dipartimento Sci Mat, I-20125 Milan, Italy

[4] ETH, Solid State Phys Lab, CH-8093 Zurich, Switzerland

[5] CNR IFN, L NESS, I-22100 Como, Italy

[6] Ctr Suisse Elect & Microtech, CH-2002 Neuchatel, Switzerland

来源：

ACTA PHYSICA POLONICA A | 2014年 / 125卷 / 04期

关键词：

MOLECULAR-BEAM EPITAXY; COMPOUND SEMICONDUCTORS; HETEROEPITAXIAL FILMS; ELECTRON-MICROSCOPY; PHASE EPITAXY; MISFIT STRAIN; DISLOCATIONS; SILICON; LAYERS; ANNIHILATION;

D O I：

10.12693/APhysPolA.125.986

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Growth on deeply patterned substrates, i.e. on pillars instead of a continuous substrate, is expected to be very promising to get crack free epilayers on wafers without any bowing. We report here on a structural investigation of GaAs MBE deposited on patterned (001) offcut Si, consisting of pillars 8 pm high and 5 to 9 pm wide, to check mostly the behaviour of the threading dislocations. It is found that only very rarely they propagate up to the GaAs top that will serve as active region in devices. Twins were also detected which sometimes reached the topmost part of GaAs. However, as twins have no associated dangling bonds, they should not be electrically active. Rare antiphase boundaries exist at the interface, hence not harmful for device operation.

引用

页码：986 / 990

页数：5

共 50 条

[21] Detailed analysis and performance limiting mechanism of Si delta-doped GaAs tunnel diode grown by MBE [J].

Kang, Seokjin ;

Ju, Gun Wu ;

Min, Jung-Wook ;

Lee, Dong-Seon ;

Lee, Yong Tak ;

Kim, Hyo Jin ;

Park, Kwangwook .

JAPANESE JOURNAL OF APPLIED PHYSICS, 2018, 57 (12)

[22] Defect characterization in compositionally graded InGaAs layers on GaAs(001) grown by MBE [J].

Sasaki, Takuo ;

Norman, Andrew G. ;

Romero, Manuel J. ;

Al-Jassim, Mowafak M. ;

Takahasi, Masamitu ;

Kojima, Nobuaki ;

Ohshita, Yoshio ;

Yamaguchi, Masafumi .

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 10, NO 11, 2013, 10 (11) :1640-1643

[23] MBE HgCdTe on si and GaAs substrates [J].

He, L. ;

Chen, L. ;

Wu, Y. ;

Fu, X. L. ;

Wang, Y. Z. ;

Wu, J. ;

Yu, M. F. ;

Yang, J. R. ;

Ding, R. J. ;

Hu, X. N. ;

Li, Y. J. ;

Zhang, Q. Y. .

JOURNAL OF CRYSTAL GROWTH, 2007, 301 :268-272

[24] Mg-doping of GaAs thin films grown by MBE [J].

Limborco, H. ;

Moreira, M. V. B. ;

Matinaga, F. M. ;

de Oliveira, A. G. ;

Gonzalez, J. C. .

2016 31ST SYMPOSIUM ON MICROELECTRONICS TECHNOLOGY AND DEVICES (SBMICRO), 2016,

[25] Structural characterization of GaAs self-assembled quantum dots grown by Droplet Epitaxy on Ge virtual substrates on Si [J].

Frigeri, C. ;

Bietti, S. ;

Isella, G. ;

Sanguinetti, S. .

APPLIED SURFACE SCIENCE, 2013, 267 :86-89

[26] HgCdTe heterostructures grown by MBE on Si(310) substrates: structural and electrophysical properties [J].

Yakushev, M. V. ;

Babenko, A. A. ;

Varavin, V. S. ;

Vasil'ev, V. V. ;

Mironova, L. V. ;

Pridachin, D. N. ;

Remesnik, V. G. ;

Sabinina, I. V. ;

Sidorov, Yu. G. ;

Suslyakov, A. O. .

19TH INTERNATIONAL CONFERENCE ON PHOTOELECTRONICS AND NIGHT VISION DEVICES, 2007, 6636

[27] Modeling of Be diffusion in GaAs layers grown by MBE [J].

Mosca, R ;

Bussei, P ;

Franchi, S ;

Frigeri, P ;

Gombia, E ;

Carnera, A ;

Peroni, M .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2002, 91 :508-511

[28] Structural study of AlGaAs/InGaAs superlattices grown by MBE on (III)B GaAs substrates [J].

Rojas, TC ;

Molina, SI ;

Romero, MJ ;

Sacedon, A ;

Calleja, E ;

Garcia, R .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1997, 44 (1-3) :106-109

[29] Structural characterization of MBE grown InGaGdN/GaN and InGaN/GaGdN structures [J].

Krishnamurthy, Daivasigamani ;

Tawil, Siti Nooraya Mohd ;

Kakimi, Rina ;

Ishimaru, Manabu ;

Emura, Shuichi ;

Zhou, Yi-Kai ;

Hasegawa, Shigehiko ;

Asahi, Hajime .

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 7-8, 2011, 8 (7-8) :2245-2247

[30] All-MBE grown InAs/GaAs quantum dot lasers with thin Ge buffer layer on Si substrates [J].

Yang, Junjie ;

Liu, Zizhuo ;

Jurczak, Pamela ;

Tang, Mingchu ;

Li, Keshuang ;

Pan, Shujie ;

Sanchez, Ana ;

Beanland, Richard ;

Zhang, Jin-Chuan ;

Wang, Huan ;

Liu, Fengqi ;

Li, Zhibo ;

Shutts, Samuel ;

Smowton, Peter ;

Chen, Siming ;

Seeds, Alwyn ;

Liu, Huiyun .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2021, 54 (03)

← 1 2 3 4 5 →