A Structural Characterization of GaAs MBE Grown on Si Pillars

被引：3
作者：
Frigeri, C. [1 ]
Bietti, S. [2 ,3 ]
Scaccabarozzi, A. [2 ,3 ]
Bergamaschini, R. [2 ,3 ]
Falub, C. V. [4 ]
Grillo, V. [1 ]
Bollani, M. [5 ]
Bonera, E. [2 ,3 ]
Niedermann, P. [6 ]
von Kaenel, H. [4 ]
Sanguinetti, S. [2 ,3 ]
Miglio, L. [2 ,3 ]
机构：
[1] CNR IMEM Inst, I-43100 Parma, Italy
[2] L Ness, I-20125 Milan, Italy
[3] Dipartimento Sci Mat, I-20125 Milan, Italy
[4] ETH, Solid State Phys Lab, CH-8093 Zurich, Switzerland
[5] CNR IFN, L NESS, I-22100 Como, Italy
[6] Ctr Suisse Elect & Microtech, CH-2002 Neuchatel, Switzerland
来源：
ACTA PHYSICA POLONICA A | 2014年 / 125卷 / 04期
关键词：
MOLECULAR-BEAM EPITAXY; COMPOUND SEMICONDUCTORS; HETEROEPITAXIAL FILMS; ELECTRON-MICROSCOPY; PHASE EPITAXY; MISFIT STRAIN; DISLOCATIONS; SILICON; LAYERS; ANNIHILATION;
D O I：
10.12693/APhysPolA.125.986
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Growth on deeply patterned substrates, i.e. on pillars instead of a continuous substrate, is expected to be very promising to get crack free epilayers on wafers without any bowing. We report here on a structural investigation of GaAs MBE deposited on patterned (001) offcut Si, consisting of pillars 8 pm high and 5 to 9 pm wide, to check mostly the behaviour of the threading dislocations. It is found that only very rarely they propagate up to the GaAs top that will serve as active region in devices. Twins were also detected which sometimes reached the topmost part of GaAs. However, as twins have no associated dangling bonds, they should not be electrically active. Rare antiphase boundaries exist at the interface, hence not harmful for device operation.
引用
收藏
页码：986 / 990
页数：5
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