Mg-doped ZnO thin films deposited by the atomic layer chemical vapor deposition for the buffer layer of CIGS solar cell

被引：32
作者：
Li, Zhao-Hui [1 ,2 ]
Cho, Eou-Sik [1 ]
Kwon, Sang Jik [1 ]
机构：
[1] Gachon Univ, Dept Elect Engn, Songnam 461701, Gyunggi Do, South Korea
[2] Chinese Acad Sci, Shenzhen Inst Adv Technol, Ctr Photovolta & Solar Energy, Shenzhen 518055, Peoples R China
来源：
APPLIED SURFACE SCIENCE | 2014年 / 314卷
基金：
新加坡国家研究基金会;
关键词：
Thin films; Chemical vapor deposition (CVD); Electron microscopy (STEM TEM and SEM); Optical properties; BAND-GAP; MGXZN1-XO; GROWTH;
D O I：
10.1016/j.apsusc.2014.06.136
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Mg-doped ZnO [(Zn, Mg)O] thin films were prepared by atomic layer chemical vapor deposition (ALCVD) process with different Mg content, using diethyl zinc, biscyclopentadienyl magnesium, and water as the metal and oxygen sources, respectively. The ratio of Mg to Zn was varied by changing the pulse ratio of MgCp2 to DEZn precursor to study its effect on the properties of (Zn, Mg)O thin films. From the experimental results, it was shown that the grain size of the ZnO-like hexagonal phase (Zn, Mg)O decreased as the Mg content increased. But the transmittance and optical band gap of (Zn, Mg)O films increased with the increase of the Mg content. In addition, the effect of the substrate temperature on the properties of (Zn, Mg)O films was also investigated. The deposition rate, transmittance, and crystallinity of (Zn, Mg)O films increased as the substrate temperature increased. But its band gap decreased slightly with the increase of substrate temperature. (C) 2014 Elsevier B.V. All rights reserved.
引用
收藏
页码：97 / 103
页数：7
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