MMICs time-domain electrical physical simulator adapted to the parallel computation

被引:0
作者
El Moussati, A. [1 ]
De Jaeger, J. -C. [1 ]
Dalle, C. [1 ]
机构
[1] Inst Elect Microelect & Nanotechnol, F-59652 Villeneuve Dascq, France
关键词
parallel computation; electronic circuit simulator; semiconductor device; HEMT transistor; quasi-two-dimensional modeling; numerical physical modeling; macroscopic modeling; microwave; SEMICONDUCTOR-DEVICE SIMULATION; TRANSPORT MODELS; GAAS-MESFETS; WAVE; PERFORMANCE; FIELD;
D O I
10.1002/jnm.706
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The programming method used to adapt an existing time-domain electrical circuit simulator to the parallel computation is presented. The originality of the simulator results in the semiconductor device numerical physical modeling. Thus, the organization of the existing software, initially developed to be run on a monoprocessor sequential Unix workstation, is firstly detailed. Accounting for specifications at once regarding the effort necessary to modify the software, the wished simulator application field and the constraints resulting from the available computer, two levels of parallelization have been pointed out and implemented by means of the message passing interface parallel programming tool. As an illustration, some results concerning the simulation of a microwave monolithic integrated circuit (MMIC), especially a 2-40 GHz HEMT transistor cascode stage distributed amplifier, are presented. Circuits of increasing complexity have been considered. The evaluation of the sequential/parallel computation ratio demonstrates that significant gains can be expected from the parallel computation opening the way to analysis of the operation of MMICs of mean complexity by means of a numerical physical approach. Copyright (C) 2008 John Wiley & Sons, Ltd.
引用
收藏
页码:279 / 296
页数:18
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