Dual-gate low-voltage organic transistor for pressure sensing

被引：19

作者：

Tsuji, Yushi ^{[1
]}

Sakai, Heisuke ^{[1
]}

Feng, Linrun ^{[2
]}

Guo, Xiaojun ^{[2
]}

Murata, Hideyuki ^{[1
]}

机构：

[1] Japan Adv Inst Sci & Technol, Sch Mat Sci, Nomi, Ishikawa 9231292, Japan

[2] Shanghai Jiao Tong Univ, Dept Elect Engn, Natl Engn Lab TFT LCD Mat & Technol, Shanghai 200240, Peoples R China

来源：

APPLIED PHYSICS EXPRESS | 2017年 / 10卷 / 02期

关键词：

FIELD-EFFECT TRANSISTORS; THIN-FILM-TRANSISTOR; SENSOR MATRIX; ARRAY; SENSITIVITY; SUBSTRATE; SKIN;

D O I：

10.7567/APEX.10.021601

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We simultaneously achieved low-voltage operation (-5 V) and large drain current (I-D) modulation in a dual-gate organic pressure sensor in which a piezoelectric layer was stacked on a low-voltage organic field-effect transistor (OFET). During testing, ID changed from 3.9 x 10(-9) to 2.5 x 10(-11)A when a 300 kPa pressure load was applied, and ID clearly responded to the pressure load and release. An endurance cycle test of the device was performed using a pressure load of 100 kPa, and the ID modulation was consistently reproduced throughout the test. (C) 2017 The Japan Society of Applied Physics

引用

页数：4

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