Structural and Photoelectric Properties of Epitaxially Grown Vanadium Dioxide Thin Films on c-Plane Sapphire and Titanium Dioxide

被引：13

作者：

Creeden, Jason A. ^{[1
]}

Madaras, Scott E. ^{[1
]}

Beringer, Douglas B. ^{[1
]}

Beebe, Melissa R. ^{[1
]}

Novikova, Irina ^{[1
]}

Lukaszew, R. Ale ^{[1
]}

机构：

[1] William & Mary Dept Phys, Williamsburg, VA 23187 USA

来源：

SCIENTIFIC REPORTS | 2019年 / 9卷 / 1期

关键词：

METAL-INSULATOR-TRANSITION; CRYSTALLOGRAPHY OPEN DATABASE; OPEN-ACCESS COLLECTION; VO2; SCATTERING; OXIDES;

D O I：

10.1038/s41598-019-45806-8

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

Vanadium dioxide (VO2) is one of the most extensively studied materials in the strongly correlated electron family capable of sustaining an insulator-to-metal transition. Here we present our studies of high-quality thin films of epitaxially grown VO2 on c-Al2O3(0001) and TiO2(001) via reactive DC pulsed magnetron sputtering. We present the structural transition probed via Reflection High Energy Electron Diffraction (RHEED) for the first time and we correlate the surface microstructure measurements with simulations before, during, and after the thermally induced transition. We also study the photoelectric conversion of VO2 on TiO2 (001) and c-Al2O3(0001) under 405 nm light and demonstrate up to a 2000% increase in quantum efficiency as the power of the light is varied for VO2 on TiO2(001).

引用

页数：9

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