Photoluminescence decay measurements of ZnSxSe1-x (0<x<0.12) epilayers on GaAs substrate grown by molecular beam epitaxy

被引：6
作者：
Shin, EJ
Lee, JI
Liem, NQ
Kim, D
Son, JS
Leem, JY
Noh, SK
Lee, D
机构：
[1] KOREA RES INST STAND & SCI,THIN FILM LAB,TAEJON 305600,SOUTH KOREA
[2] CHUNGNAM NATL UNIV,DEPT PHYS,TAEJON 305764,SOUTH KOREA
来源：
SOLID STATE COMMUNICATIONS | 1997年 / 102卷 / 12期
关键词：
semiconductors; epitaxy; luminescence; time-resolved optical spectroscopies;
D O I：
10.1016/S0038-1098(97)00113-0
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The steady-state and time-resolved photoluminescence (PL) studies of ZnSxSe1-x epilayers on GaAs substrate grown by molecular beam epitaxy around the lattice matching composition (0 < x < 0.12) are discussed. We have investigated the PL decay dynamics of ZnSxSe1-x epilayers and found that the decay time of the ZnSxSe1-x epilayer with sulfur composition closely lattice-matched with the substrate is longer than that of any other sample. This finding is interpreted as indicating that the defects induced by lattice mismatch act as nonradiative recombination centers and consequently reduce the PL lifetimes of the epilayers. These studies suggest that the lattice mismatch has a strong correlation with PL lifetimes of the ZnSxSe1-x epilayers. (C) 1997 Elsevier Science Ltd.
引用
收藏
页码：855 / 859
页数：5
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