Transparent conductive oxide thin films of tungsten-doped indium oxide

被引：56
作者：
Li, Xifeng [1 ]
Zhang, Qun [1 ]
Miao, Weina [1 ]
Huang, Li [1 ]
Zhang, Zhuangjian [1 ]
机构：
[1] Fudan Univ, Dept Mat Sci, Shanghai 200433, Peoples R China
来源：
THIN SOLID FILMS | 2006年 / 515卷 / 04期
关键词：
mobility; transparent conductive oxide; tungsten-doped indium oxide; indium oxide; sputtering;
D O I：
10.1016/j.tsf.2006.07.014
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Transparent conductive oxide thin film of tungsten-doped In2O3 (IWO) has been prepared by reactive direct current magnetron sputtering from the tungsten-embedded indium metal target. The effect of tungsten doping content on the optoelectrical properties of IWO films was investigated. The lowest resistivity of 2.7 x 10(-4) Omega(.)cm was reproducibly obtained, with carrier mobility greater than 57 cm(2) V-1 s(-1) and carrier concentration of 4.0 x 10(20) cm(-3), as well as the transmission in visible light range exceeding 80%. X-ray diffraction measurements indicate that the as-deposited IWO films are well crystallized with a preferential orientation of (222). (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码：2471 / 2474
页数：4
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