Low-fire BiTaO4 dielectric ceramics for microwave applications

被引：56

作者：

Huang, CL ^{[1
]}

Weng, MH ^{[1
]}

机构：

[1] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 70101, Taiwan

来源：

MATERIALS LETTERS | 2000年 / 43卷 / 1-2期

关键词：

microwave dielectric ceramics; BiTaO4; low-firing;

D O I：

10.1016/S0167-577X(99)00226-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The dielectric properties at microwave frequencies and the microstructures of BiTaO4 ceramics with 0.5 wt.% doping of CuO have been investigated. The BiTaO4 ceramics can be sintered to approach 95% theoretical density at 960 degrees C. Sintered ceramic samples were characterized by X-ray and scanning electron microscopy (SEM). The dielectric constant values (epsilon(r)) saturate at 44-45. The Q X f values of 8000-12 000 (at 6 GHz) can be obtained when the sintering temperatures are in the range of 920-960 degrees C. The temperature coefficient of resonant frequency tau(f) was -40 ppm/degrees C. The BiTaO4 ceramics have applications for multilayer microwave devices requiring low sintering temperatures. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：32 / 35

页数：4

共 9 条

[1] Effects of Nd2O3 on the microwave dielectric properties of BiNbO4 ceramics [J].