Spin-transfer induced switching in nanomagnetoresistive devices composed of Co/Pt multilayers with perpendicular magnetic anisotropy

被引：8
|
作者：
Park, Jeong-Heon [1 ]
Moneck, Matthew T. [2 ]
Park, Chando [3 ]
Zhu, Jian-Gang [2 ]
机构：
[1] Carnegie Mellon Univ, Dept Mat Sci & Engn, Pittsburgh, PA 15213 USA
[2] Carnegie Mellon Univ, Dept Elect & Comp Engn, Pittsburgh, PA 15213 USA
[3] Western Digital Corp, Fremont, CA 94539 USA
来源：
JOURNAL OF APPLIED PHYSICS | 2009年 / 105卷 / 07期
基金：
美国安德鲁·梅隆基金会; 美国国家科学基金会;
关键词：
TORQUE;
D O I：
10.1063/1.3072822
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We demonstrate spin-transfer switching of nanomagnetic devices composed of Co/Pt multilayer electrodes with perpendicular magnetic anisotropy. In order to obtain highly spin-polarized current, we have proposed the adoption of thick Co adjacent layers. The film stack has been optimized so that two different Co/Pt multilayer electrodes switch separately, with each having narrow switching field distribution. Detrimental effects of surface roughness have been observed and minimized to achieve well-defined switching behavior. Diverse nanopillar devices fabricated by e-beam lithography and subsequent processes show well-defined single step switching in both perpendicular field and injected current applications. The critical current density obtained is comparable to that of Co/Ni electrode based devices, indicating enhanced spin-transfer efficiency. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3072822]
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页数：3
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