Strongly nonlinear electronic transport in Cr-Si composite films

被引:14
作者
Burkov, AT
Vinzelberg, H
Schumann, J
Nakama, T
Yagasaki, K
机构
[1] Leibniz Inst Solid State & Mat Res Dresden, D-01171 Dresden, Germany
[2] Russian Acad Sci, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia
[3] Univ Ryukyus, Dept Phys, Okinawa 9030213, Japan
关键词
D O I
10.1063/1.1719266
中图分类号
O59 [应用物理学];
学科分类号
摘要
The phase formation, the resistivity and the thermopower of amorphous Cr0.15Si0.85, and nanocrystalline CrSi2-Si thin film composites have been studied. The films were produced by a magnetron sputtering of a composite target onto unheated substrates with subsequent crystallization of the film at high temperatures. As the film composite develops under the heat treatment from the initial amorphous state into the final polycrystalline material, two percolation thresholds were found. At first, the percolating cluster of nanocrystalline CrSi2 is formed. However, this cluster is destroyed with further annealing due to crystallization and redistribution of Si. The composite films which are close to this insulating threshold reveal a strongly nonlinear conductivity. The conductivity increases with the current by two orders of magnitude. (C) 2004 American Institute of Physics.
引用
收藏
页码:7903 / 7907
页数:5
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