Monte Carlo modeling of low-energy electron-induced secondary electron emission yields in micro-architected boron nitride surfaces

被引:11
作者
Chang, Hsing-Yin [1 ]
Alvarado, Andrew [1 ]
Weber, Trey [1 ]
Marian, Jaime [1 ,2 ]
机构
[1] Univ Calif Los Angeles, Dept Mat Sci & Engn, Los Angeles, CA 90095 USA
[2] Univ Calif Los Angeles, Dept Mech & Aerosp Engn, Los Angeles, CA 90095 USA
关键词
Monte Carlo simulation; Electron-insulator interactions; Secondary electron emission; Spacecraft charging; HALL THRUSTER; ELASTIC-SCATTERING; INSULATORS; DEPENDENCE; TUNGSTEN; CARBON; ANGLE;
D O I
10.1016/j.nimb.2019.05.079
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
Surface erosion and secondary electron emission (SEE) have been identified as the most critical life-limiting factors in channel walls of Hall-effect thrusters for space propulsion. Recent wall concepts based on micro-architected surfaces have been proposed to mitigate surface erosion and SEE. The idea behind these designs is to take advantage of very-high surface-to-volume ratios to reduce SEE and ion erosion by internal trapping and redeposition. This has resulted in renewed interest to study electron electron processes in relevant thruster wall materials. In this work, we present calculations of SEE yields in micro-porous hexagonal BN surfaces using stochastic simulations of electron-material interactions in discretized surface geometries. Our model consists of two complementary parts. First we study SEE as a function of primary electron energy and incidence angle in flat surfaces using Monte Carlo simulations of electron multi-scattering processes. The results are then used to represent the response function of discrete surface elements to individual electron rays generated using a ray tracing Monte Carlo model. We find that micro-porous surfaces result in SEE yield reductions of over 50% in the energy range experienced in Hall thrusters. This points to the suitability of these micro-architected surface concepts to mitigate SEE-related issues in compact electric propulsion devices.
引用
收藏
页码:14 / 22
页数:9
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