Structure and photoluminescence of polymer-derived Pr-doped SiAlON red phosphor

被引:4
作者
Yu, Hui [1 ]
Cheng, Xuan [1 ,2 ]
Zhang, Ying [1 ,2 ]
Li, Quan [1 ]
Gong, Chaoyang [1 ,2 ]
机构
[1] Xiamen Univ, Dept Mat Sci & Engn, Coll Mat, Xiamen 361005, Fujian, Peoples R China
[2] Xiamen Univ, Fujian Key Lab Adv Mat, Xiamen 361005, Fujian, Peoples R China
基金
中国国家自然科学基金;
关键词
Precursors: organic; X-ray methods; Optical properties; Sialon; BETA-SIALON/PR3+; OXYNITRIDE;
D O I
10.1016/j.ceramint.2017.02.111
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The praseodymium (Pr)-doped silicon based aluminum oxynitride (SiAlON) red phosphors were prepared by a novel polymer-derived method using polycarbosilane and acetylacetonates as the starting materials. The organic precursors containing Pr and Al were formed via polymer reactions at 320 degrees C, followed by nitridizing with NH3 at 800 degrees C for the organic-inorganic transformation, and finally by sintering under N-2 at 1650 degrees C for the crystallization. Accordingly, the chemical composition, surface morphology, crystal structure and photoluminescence property of the polymer-derived Pr-doped SiAlON phosphors were studied. The strong red emission was observed at 623 nm under the excitation of 290 nm with the average decay time of 30 mu s, corresponding to D-1(2) -> H-3(4) transition. The empirical formula was determined to be Si3.0Al0.2O0.3N3.0C0.03Pr0.02, which is Si rich with trace amount of C. The main crystal phase was identified as hexagonal beta-(Si,Al)(3)(O,N)(4):Pr with a space group P6(3). Each Pr ion was located in the lattice along c-axis by coordinating with three nearest N/O atoms in the neighboring plane. In addition, the amorphous Si rich components were also presented. Possible impure phases, accounted for less than 5%, might include SiC, (Pr-2(Al0.5Si2.5O3.5N3.5) and PrSi3N5.
引用
收藏
页码:6898 / 6903
页数:6
相关论文
共 12 条
[1]   Structural and luminescent characteristics of two-step processed BaAl2-xSixO4-xNx:Eu2+ phosphors [J].
Anoop, G. ;
Cho, I. H. ;
Suh, D. W. ;
Kim, C. K. ;
Yoo, J. S. .
JOURNAL OF LUMINESCENCE, 2013, 134 :390-395
[2]   X-RAY PHOTOELECTRON SPECTROSCOPIC STUDIES OF BETA-SIALONS [J].
HAGIO, T ;
TAKASE, A ;
UMEBAYASHI, S .
JOURNAL OF MATERIALS SCIENCE LETTERS, 1992, 11 (12) :878-880
[3]   SIALONS AND RELATED NITROGEN CERAMICS [J].
JACK, KH .
JOURNAL OF MATERIALS SCIENCE, 1976, 11 (06) :1135-1158
[4]   New Pr3+ site in β-SiAlON red phosphor [J].
Lazarowska, Agata ;
Mahlik, Sebastian ;
Grinberg, Marek ;
Liu, Tzu-Chen ;
Liu, Ru-Shi .
OPTICAL MATERIALS, 2013, 35 (11) :2001-2005
[5]   A novel polymer-derived method to prepare Eu-doped Si3N4 yellow phosphor [J].
Li, Quan ;
Gong, Chaoyang ;
Cheng, Xuan ;
Zhang, Ying .
CERAMICS INTERNATIONAL, 2015, 41 (03) :4227-4230
[6]   Highly Stable Red Oxynitride β-SiAlON:Pr3+ Phosphor for Light-Emitting Diodes [J].
Liu, Tzu-Chen ;
Cheng, Bing-Ming ;
Hu, Shu-Fen ;
Liu, Ru-Shi .
CHEMISTRY OF MATERIALS, 2011, 23 (16) :3698-3705
[7]   Luminescence Spectra of β-SiAlON/Pr3+ Under High Hydrostatic Pressure [J].
Mahlik, Sebastian ;
Lazarowska, Agata ;
Grinberg, Marek ;
Liu, Tzu-Chen ;
Liu, Ru-Shi .
JOURNAL OF PHYSICAL CHEMISTRY C, 2013, 117 (25) :13181-13186
[8]   XPES STUDIES OF OXIDES OF 2ND-ROW AND 3RD-ROW TRANSITION-METALS INCLUDING RARE-EARTHS [J].
SARMA, DD ;
RAO, CNR .
JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1980, 20 (1-2) :25-45
[9]   EXPGUI, a graphical user interface for GSAS [J].
Toby, BH .
JOURNAL OF APPLIED CRYSTALLOGRAPHY, 2001, 34 :210-213
[10]   Structural and light emitting properties of silicon-rich silicon nitride films grown by plasma enhanced-chemical vapor deposition [J].
Torchynska, T. V. ;
Casas Espinola, J. L. ;
Khomenkova, L. ;
Vergara Hernandez, E. ;
Andraca Adame, J. A. ;
Slaoui, A. .
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2015, 37 :46-50