Characteristics of nanoporous InGaN/GaN multiple quantum wells

被引：9
作者：
Wang, W. J. [1 ,2 ]
Yang, G. F. [1 ,2 ,4 ]
Chen, P. [1 ,2 ,3 ]
Yu, Z. G. [1 ,2 ]
Liu, B. [1 ,2 ]
Xie, Z. L. [1 ,2 ]
Xiu, X. Q. [1 ,2 ]
Wu, Z. L. [3 ]
Xu, F. [3 ]
Xu, Z. [3 ]
Hua, X. M. [1 ,2 ]
Zhao, H. [1 ,2 ]
Han, P. [1 ,2 ]
Shi, Y. [1 ,2 ]
Zhang, R. [1 ,2 ]
Zheng, Y. D. [1 ,2 ]
机构：
[1] Nanjing Univ, Jiangsu Prov Key Lab Adv Photon & Elect Mat, Nanjing 210093, Jiangsu, Peoples R China
[2] Nanjing Univ, Sch Elect Sci & Engn, Nanjing 210093, Jiangsu, Peoples R China
[3] Nanjing Univ, Inst Optoelect, Yangzhou 225009, Peoples R China
[4] Jiangnan Univ, Sch Sci, Wuxi 214122, Peoples R China
来源：
SUPERLATTICES AND MICROSTRUCTURES | 2014年 / 71卷
关键词：
Nanostructure fabrication; Nanoporous structure; InGaN/GaN multiple quantum wells; Photoluminescence; LIGHT-EMITTING-DIODES; MOLECULAR-BEAM EPITAXY; HIGH-EFFICIENCY; NANOROD ARRAYS; GAN; SAPPHIRE; EMISSION; LAYERS; PHOTOLUMINESCENCE; RELAXATION;
D O I：
10.1016/j.spmi.2014.03.012
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The nanoporous InGaN/GaN multiple quantum wells (MQWs) has been fabricated through rapid thermal annealing (RTA) and inductively coupled plasma (ICP) dry etching process using self-assembled Ni nanoporous masks. In comparison with the as-grown planar InGaN/GaN MQWs, both internal quantum efficiency and light extraction efficiency for nanoporous InGaN/GaN MQWs are increased, which can be concluded from the photoluniinescence (PL) measurements. The thermal activation energy of nanoporous structure (107.44 meV) is significantly higher than that of the as-grown sample (33.02 meV) from temperature-dependent PL measurement, indicating that carriers are well confined and the nonradiative recombination caused by the dislocations and other defects has been reduced. Besides, enhanced light scattering in the disordered nanoporous system can further increase the output emission intensity. The enhanced performance of nanoporous InGaN/GaN MQWs reveals its promising applications for high-efficiency light-emitting devices. (C) 2014 Elsevier Ltd. All rights reserved.
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页码：38 / 45
页数：8
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