The formation of magnetic suicide Fe3Si clusters during ion implantation

被引：4
作者：
Balakirev, N. [1 ]
Zhikharev, V. [1 ]
Gumarov, G. [2 ]
机构：
[1] Kazan Natl Res Technol Univ, Kazan 420015, Russia
[2] Russian Acad Sci, Zavoiskii Physicotech Inst, Kazan 420029, Russia
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2014年 / 326卷
基金：
俄罗斯基础研究基金会;
关键词：
Ion implantation; Clusters; Magnetic anisotropy; Computer simulation; DIFFUSION-LIMITED AGGREGATION; IRRADIATION; LAYERS; FILMS; FIELD;
D O I：
10.1016/j.nimb.2013.09.032
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
A simple two-dimensional model of the formation of magnetic silicide Fe3Si clusters during high-dose Fe ion implantation into silicon has been proposed and the cluster growth process has been computer simulated. The model takes into account the interaction between the cluster magnetization and magnetic moments of Fe atoms random walking in the implanted layer. If the clusters are formed in the presence of the external magnetic field parallel to the implanted layer, the model predicts the elongation of the growing cluster in the field direction. It has been proposed that the cluster elongation results in the uniaxial magnetic anisotropy in the plane of the implanted layer, which is observed in iron suicide films ionbeam synthesized in the external magnetic field. (c) 2014 Elsevier B.V. All rights reserved.
引用
收藏
页码：61 / 64
页数：4
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