Transport properties of germanium-filled CoSb3

被引：62

作者：

Nolas, GS ^{[1
]}

Yang, J

Takizawa, H

机构：

[1] Univ S Florida, Dept Phys, Tampa, FL 33620 USA

[2] GM Corp, R&D Ctr, Mat & Proc Lab, Warren, MI 48090 USA

[3] Tohoku Univ, Dept Appl Chem, Sendai, Miyagi 980, Japan

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 25期

关键词：

D O I：

10.1063/1.1765205

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the transport properties of dense polycrystalline Ge filled skutterudites Ge0.25Co4Sb12 and Ge0.05Co4Sb12 perepared by a high-pressure synthesis approach. Low temperature electrical resistivity, Seebeck coefficient, Hall coefficient, and thermal conductivity measurements were performed and compared with those of Co4Sb11Ge and CoSb3. The Ge atoms residing inside the interstitial voids of the skutterudite crystal structure act as electron donors. The lattice thermal conductivity of these compounds is lower than that of CoSb3 but higher than that of other filled skutterudites. The potential for thermoelectric applications is also discussed. (C) 2004 American Institute of Physics.

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页码：5210 / 5212

页数：3

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