Distribution of Light Elements in Multicrystalline Silicon for Solar Cells Grown by Directional Solidification

被引：7

作者：

Matsuo, Hitoshi ^{[1
]}

Hisamatsu, Sho ^{[1
]}

Kangawa, Yoshihiro ^{[1
,2
]}

Kakimoto, Koichi ^{[1
,2
]}

机构：

[1] Kyushu Univ, Grad Sch Engn, Fukuoka 8168580, Japan

[2] Kyushu Univ, Res Inst Appl Mech, Fukuoka 8168580, Japan

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2009年 / 156卷 / 09期

关键词：

directional solidification; elemental semiconductors; ingots; precipitation; silicon; silicon compounds; solar cells; OXYGEN PRECIPITATION; GRAIN-BOUNDARY; POLYCRYSTALLINE; SEGREGATION; NITROGEN; CARBON;

D O I：

10.1149/1.3155433

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

We investigated the relationship between the formation of small grains and the distribution of precipitates such as Si3N4 and SiON in a multicrystalline silicon ingot grown by the unidirectional solidification method. Si3N4 precipitates were mainly observed inside the small grain region, while SiON was mainly precipitated outside the small grain region. SiON started to precipitate before the formation of Si3N4 precipitates. Therefore, precipitation of SiON before precipitation of Si3N4 is a candidate in the formation of small grains.

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页码：H711 / H715

页数：5

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