In situ X-ray diffraction during stacking of InAs/GaAs(001) quantum dot layers and photoluminescence spectroscopy

被引：10
|
作者：
Takahasi, M. [1 ]
Kaizu, T. [2 ]
机构：
[1] Japan Atom Energy Agcy, Synchrotron Radiat Res Ctr, Sayo, Hyogo 6795148, Japan
[2] Natl Inst Mat Sci, Quantum Dot Res Ctr, Tsukuba, Ibaraki 3050003, Japan
来源：
JOURNAL OF CRYSTAL GROWTH | 2009年 / 311卷 / 07期
关键词：
Nanostructures; X-ray diffraction; Molecular beam epitaxy; Semiconducting III-V materials; SCATTERING; STRAIN; GROWTH;
D O I：
10.1016/j.jcrysgro.2008.09.202
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
The growth of five layers of InAs quantum dots embedded in GaAs matrices was investigated by in situ synchrotron X-ray diffraction. Time-resolved X-ray diffraction revealed the evolution of the strains and height of quantum dots during the entire growth process including the nucleation of islands and encapsulation with GaAs at various substrate temperatures. Comparisons of in situ X-ray results with postgrowth photoluminescence spectra showed a clear correlation between the structural and optical properties. (C) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码：1761 / 1763
页数：3
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