共 21 条
Improved optoelectronics properties of ITO-based transparent conductive electrodes with the insertion of Ag/Ni under-layer
被引:10
作者:
Ali, Ahmad Hadi
[1
,2
]
Abu Bakar, Ahmad Shuhaimi
[3
]
Hassan, Zainuriah
[2
]
机构:
[1] Univ Tun Hussein Onn Malaysia, Fac Sci Technol & Human Dev, Dept Sci, Johor Baharu, Malaysia
[2] Univ Sains Malaysia, Sch Phys, Nano Optoelect Res & Technol Lab, George Town, Malaysia
[3] Univ Malaya, Dept Phys, Fac Sci, Low Dimens Mat Res Ctr, Kuala Lumpur 59100, Malaysia
关键词:
ITO;
Ag/Ni;
Sputtering;
Transparent conductive electrode;
Annealing;
TIN-OXIDE-FILMS;
TEMPERATURE;
D O I:
10.1016/j.apsusc.2014.07.172
中图分类号:
O64 [物理化学(理论化学)、化学物理学];
学科分类号:
070304 ;
081704 ;
摘要:
ITO-based transparent conductive electrodes (TCE) with Ag/Ni thin metal under-layer were deposited on Si and glass substrates by thermal evaporator and RF magnetron sputtering system. Ceramic ITO with purity of 99.99% and In2O:SnO2 weight ratio of 90:10 was used as a target at room temperature. Post-deposition annealing was performed on the TCE at moderate temperature of 500 degrees C, 600 degrees C and 700 degrees C under N-2 ambient. It was observed that the structural properties, optical transmittance, electrical characteristics and surface morphology were improved significantly after the post-annealing process. Post-annealed ITO/Ag/Ni at 600 degrees C shows the best quality of TCE with figure-of-merit (FOM) of 1.5 x 10(-2) Omega(-1) and high optical transmittance of 83% at 470 nm as well as very low electrical resistivity of 4.3 x 10(-5) Omega-cm. The crystalline quality and surface morphological plays an important role in determining the quality of the TCE multilayer thin films properties. (C) 2014 Elsevier B.V. All rights reserved.
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页码:387 / 391
页数:5
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