Improved optoelectronics properties of ITO-based transparent conductive electrodes with the insertion of Ag/Ni under-layer

被引:10
作者
Ali, Ahmad Hadi [1 ,2 ]
Abu Bakar, Ahmad Shuhaimi [3 ]
Hassan, Zainuriah [2 ]
机构
[1] Univ Tun Hussein Onn Malaysia, Fac Sci Technol & Human Dev, Dept Sci, Johor Baharu, Malaysia
[2] Univ Sains Malaysia, Sch Phys, Nano Optoelect Res & Technol Lab, George Town, Malaysia
[3] Univ Malaya, Dept Phys, Fac Sci, Low Dimens Mat Res Ctr, Kuala Lumpur 59100, Malaysia
关键词
ITO; Ag/Ni; Sputtering; Transparent conductive electrode; Annealing; TIN-OXIDE-FILMS; TEMPERATURE;
D O I
10.1016/j.apsusc.2014.07.172
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
ITO-based transparent conductive electrodes (TCE) with Ag/Ni thin metal under-layer were deposited on Si and glass substrates by thermal evaporator and RF magnetron sputtering system. Ceramic ITO with purity of 99.99% and In2O:SnO2 weight ratio of 90:10 was used as a target at room temperature. Post-deposition annealing was performed on the TCE at moderate temperature of 500 degrees C, 600 degrees C and 700 degrees C under N-2 ambient. It was observed that the structural properties, optical transmittance, electrical characteristics and surface morphology were improved significantly after the post-annealing process. Post-annealed ITO/Ag/Ni at 600 degrees C shows the best quality of TCE with figure-of-merit (FOM) of 1.5 x 10(-2) Omega(-1) and high optical transmittance of 83% at 470 nm as well as very low electrical resistivity of 4.3 x 10(-5) Omega-cm. The crystalline quality and surface morphological plays an important role in determining the quality of the TCE multilayer thin films properties. (C) 2014 Elsevier B.V. All rights reserved.
引用
收藏
页码:387 / 391
页数:5
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