Impact of low-temperature annealing on defect levels generated by Mg-ion-implanted GaN

被引：7

作者：

Akazawa, Masamichi ^{[1
]}

Uetake, Kei ^{[1
]}

机构：

[1] Hokkaido Univ, Res Ctr Integrated Quantum Elect, Sapporo, Hokkaido 0600813, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2019年 / 58卷 / SC期

关键词：

P-TYPE CONDUCTION; N-TYPE GAN; DOPED GAN; NITROGEN-VACANCY; DEEP LEVELS; SEMICONDUCTOR; ACTIVATION; PHOTOLUMINESCENCE; ACCEPTORS; JUNCTION;

D O I：

10.7567/1347-4065/ab09d5

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The impact of low-temperature annealing on Mg-ion-implanted GaN with a low dosage (1.5 x 10(11) cm(-2)) has been investigated using MOS diodes. Low-temperature annealing was carried out for Mg-ion-implanted GaN in the temperature range from 400 degrees C to 700 degrees C before forming the insulator/semiconductor interface of the tested MOS diodes. Upon annealing, the hysteresis and the slope of the capacitance-voltage (C-V) curves, which were affected by deep levels in the GaN bulk, were changed with the annealing temperature. In particular, the shape of C-V curve was changed by annealing at a temperature as low as 500 degrees C. The C-V curves were found to be reproducible by a simulation in which the dominant deep levels were assumed to be located at 0.1 and 0.7 eV below the conduction band edge. Considering the low recovery temperature and low dosage, the possibility of the existence of simple defects after implantation is discussed. (C) 2019 The Japan Society of Applied Physics

引用

页数：6

共 40 条

[11] Deep-level defects and n-type-carrier concentration in nitrogen implanted GaN [J].

Haase, D ;

Schmid, M ;

Kurner, W ;

Dornen, A ;

Harle, V ;

Scholz, F ;

Burkard, M ;

Schweizer, H .

APPLIED PHYSICS LETTERS, 1996, 69 (17) :2525-2527

[12] ANALYSIS OF DEEP LEVELS IN N-TYPE GAN BY TRANSIENT CAPACITANCE METHODS [J].

HACKE, P ;

DETCHPROHM, T ;

HIRAMATSU, K ;

SAWAKI, N ;

TADATOMO, K ;

MIYAKE, K .

JOURNAL OF APPLIED PHYSICS, 1994, 76 (01) :304-309

[13] Interface models and processing technologies for surface passivation and interface control in III-V semiconductor nanoelectronics [J].

Hasegawa, H. ;

Akazawa, M. .

APPLIED SURFACE SCIENCE, 2008, 254 (24) :8005-8015

[14] UNIFIED DISORDER INDUCED GAP STATE MODEL FOR INSULATOR-SEMICONDUCTOR AND METAL-SEMICONDUCTOR INTERFACES [J].

HASEGAWA, H ;

OHNO, H .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (04) :1130-1138

[15] Discrete surface state related to nitrogen-vacancy defect on plasma-treated GaN surfaces [J].

Hashizume, T ;

Nakasaki, R .

APPLIED PHYSICS LETTERS, 2002, 80 (24) :4564-4566

[16] Deep levels in n-GaN Doped with Carbon Studied by Deep Level and Minority Carrier Transient Spectroscopies [J].

Honda, Unhi ;

Yamada, Yujiro ;

Tokuda, Yutaka ;

Shiojima, Kenji .

JAPANESE JOURNAL OF APPLIED PHYSICS, 2012, 51 (04)

[17] Process Conditions for Improvement of Electrical Properties of Al2O3/n-GaN Structures Prepared by Atomic Layer Deposition [J].

Hori, Yujin ;

Mizue, Chihoko ;

Hashizume, Tamotsu .

JAPANESE JOURNAL OF APPLIED PHYSICS, 2010, 49 (08)

[18] Recent progress of GaN power devices for automotive applications [J].

Kachi, Tetsu .

JAPANESE JOURNAL OF APPLIED PHYSICS, 2014, 53 (10)

[19] Deep levels in GaN studied by deep level transient spectroscopy and Laplace transform deep-level spectroscopy [J].

Kamyczek, Paulina ;

Placzek-Popko, Ewa ;

Zielony, Eunika ;

Zytkiewicz, Zbigniew .

MATERIALS SCIENCE-POLAND, 2013, 31 (04) :572-576

[20] Highly-stable and low-state-density Al2O3/GaN interfaces using epitaxial n-GaN layers grown on free-standing GaN substrates [J].

Kaneki, Shota ;

Ohira, Joji ;

Toiya, Shota ;

Yatabe, Zenji ;

Asubar, Joel T. ;

Hashizume, Tamotsu .

APPLIED PHYSICS LETTERS, 2016, 109 (16)

← 1 2 3 4 →