Channel Hot-Carrier Effect of 4H-SiC MOSFET

被引：9

作者：

Yu, Liangchun ^{[1
,2
]}

Cheung, Kin P. ^{[1
]}

Suehle, John S. ^{[1
]}

Campbell, Jason P. ^{[1
]}

Sheng, Kuang ^{[2
]}

Lelis, Aivars J. ^{[3
]}

Ryu, Sei-Hyung ^{[4
]}

机构：

[1] Natl Inst Stand & Technol, Gaithersburg, MD 20899 USA

[2] Rutgers State Univ, Piscataway, NJ 08854 USA

[3] Army Res Lab, Adelphi, MD 20783 USA

[4] Cree Inc, Durham, NC 27703 USA

来源：

SILICON CARBIDE AND RELATED MATERIALS 2008 | 2009年 / 615-617卷

关键词：

channel hot-carrier effect; MOSFET; 4H-SiC; DEPENDENCE;

D O I：

10.4028/www.scientific.net/MSF.615-617.813

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

SiC MOSFET, as power device, can be expected to operate with high drain and high gate voltages, possibly leading to hot-carrier effect. However, hot-carrier degradation in a SiC MOSFET is difficult to detect because the as fabricated devices contain high level of defects. We report, for the first time, evidence of hot-carrier effect in 4H-SiC MOSFET. The result Suggests that hot hole from impact ionization trapped in the oxide is the cause of the channel hot-carrier effect.

引用

页码：813 / 816

页数：4

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