Numerical Simulation about Effects of Bandgap Grading in Cu(In,Ga)Se2 with a Bandgap of 1.4 eV on Solar Cell Performance

被引：0

作者：

Hirai, Yoshiaki ^{[1
]}

Suzuki, Ryotaro ^{[2
]}

Kurokawa, Yasuyoshi ^{[1
]}

Yamada, Akira ^{[1
,3
]}

机构：

[1] Tokyo Inst Technol, Dept Phys Elect, Meguro Ku, Tokyo 1528552, Japan

[2] Tokyo Inst Technol, Dept Elect & Elect Engn, Tokyo 1528552, Japan

[3] Tokyo Inst Technol, Photovolta Res Ctr PVREC, Tokyo 1528552, Japan

来源：

2013 IEEE 39TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC) | 2013年

关键词：

CIGS; Bandgap grading; simulation; photovoltaic cells; compound semiconductor;

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

The effects of bandgap grading in a Cu(In, Ga)Se-2 thin film with the average bandgap of 1.4 eV on the performance of the solar cells were investigated by changing a minimum bandgap and its position employing wxAMPS. Considering minority carrier recombination at the CdS/CIGS interface, degradations of solar cell characteristics were observed. In this case, double graded band profile is required in order to suppress the recombination. However, considering also an ordered vacancy compound (OVC) at the interface, a high efficiency that is close to the case without interface recombination was obtained. These results indicate that the field effect passivation owing to OVC can suppress the interface recombination.

引用

页码：3307 / 3309

页数：3

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