Spin dependent recombination in magnetic semiconductor

被引:3
作者
Tashpour, Hojjat [1 ]
Vesaghi, M. A. [1 ]
机构
[1] Sharif Univ Technol, Dept Phys, Tehran, Iran
关键词
diffusion; magnetic semiconductors; spin density waves; spin dynamics; spin polarised transport; SPINTRONICS; ELECTRONICS; TRANSPORT; DEVICE;
D O I
10.1063/1.3155426
中图分类号
O59 [应用物理学];
学科分类号
摘要
The effect of spin dependent recombination on the transport properties of magnetic semiconductors is investigated theoretically. In particular, for p-type direct band gap semiconductors, a theory based on classic Shockley equations is formulated. In this theory the density of spin and charge has been evaluated analytically by solving the diffusive transport equation and it is shown that the difference between recombination rates affect the lifetimes of spin and charge significantly. It is also demonstrated that a considerable spin charge coupling occur. Application of this theory to pure band to band recombination process is discussed.
引用
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页数:3
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