Sputtering and ion-induced electron emission of graphite under high-dose nitrogen bombardment

被引:19
作者
Borisov, AM [1 ]
Eckstein, W
Mashkova, ES
机构
[1] Moscow MV Lomonosov State Univ, Inst Phys Nucl, Moscow 119992, Russia
[2] Max Planck Inst Plasma Phys, D-85748 Garching, Germany
关键词
D O I
10.1016/S0022-3115(02)00871-1
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The dependence of the sputtering yield Y and the electron emission coefficient gamma of isotropic graphites (POCO-AXF-5Q and Russian MPG-LT) on ion fluence and ion incidence angle 0 at near room temperatures and the dependence of gamma on target temperature under high dose 30 keV N-2(+) ion irradiation were measured. It was found that Y and gamma are stabilized at fluences F greater than or equal to 1 x 10(19) N/cm(2). A specific target surface topography develops. At steady-state conditions, the N concentration in MPG-LT is 19 at.% and in POCO16 at.%. In the angular range 0 = 0-80degrees, Y and gamma increase and the angular dependence of Y is slightly stronger than that of gamma. Sputtering yields of POCO are 1.5 times higher than those of MPG-LT. The reasons of the difference between the experimental and calculated sputtering yields using the TRIM.SP code are discussed. The dependence of gamma on the target temperature manifests a step-like increase at similar or equal to250 degreesC which may be due to radiation induced structure transformation in the modified surface layer. (C) 2002 Published by Elsevier Science B.V.
引用
收藏
页码:15 / 20
页数:6
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