Two-surface-plasmon-polariton-absorption based lithography using 400 nm femtosecond laser

被引：72

作者：

Li, Yunxiang ^{[1
]}

Liu, Fang ^{[1
]}

Ye, Yu ^{[1
]}

Meng, Weisi ^{[1
]}

Cui, Kaiyu ^{[1
]}

Feng, Xue ^{[1
]}

Zhang, Wei ^{[1
]}

Huang, Yidong ^{[1
]}

机构：

[1] Tsinghua Univ, Dept Elect Engn, Tsinghua Natl Lab Informat Sci & Technol, Beijing 100084, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2014年 / 104卷 / 08期

基金：

中国国家自然科学基金;

关键词：

PLASMONIC LITHOGRAPHY; PHOTOLITHOGRAPHY;

D O I：

10.1063/1.4866870

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The two-surface-plasmon-polariton-absorption (TSPPA) at the vacuum wavelength of 400 nm is observed, and the subwavelength lithography, by using this nonlinear phenomenon, is demonstrated. Resist patterns with the period of similar to 138 nm have been obtained by exciting the SPP at the Al/resist interface with the 400 nm femtosecond laser. By altering the exposure time, the exposure linewidth reduces from similar to 90 nm to similar to 55 nm, which explores the ability of the TSPPA based lithography at the short wavelength. The factors limiting the performance of the proposed TSPPA based lithography are discussed in detail. (C) 2014 AIP Publishing LLC.

引用

页数：4

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