Resistively switching Pt/spin-on glass/Ag nanocells for non-volatile memories fabricated with UV nanoimprint lithography

被引：23

作者：

Meier, M. ^{[1
]}

Gilles, S. ^{[2
]}

Rosezin, R. ^{[1
]}

Schindler, C. ^{[1
]}

Trellenkamp, S. ^{[2
]}

Ruediger, A. ^{[1
]}

Mayer, D. ^{[2
]}

Kuegeler, C. ^{[1
]}

Waser, R. ^{[1
,3
]}

机构：

[1] Forschungszentrum Julich, Inst Festkorperforsch, D-52425 Julich, Germany

[2] Forschungszentrum Julich, Inst Bio & Nanosyst, D-52425 Julich, Germany

[3] Rhein Westfal TH Aachen, Inst Werkstoffe Elektrotech 2, D-52074 Aachen, Germany

来源：

MICROELECTRONIC ENGINEERING | 2009年 / 86卷 / 4-6期

关键词：

Resistive switching; Nanoimprint lithography; Crossbar array; Memory devices; OXIDE-FILMS; RESISTANCE;

D O I：

10.1016/j.mee.2009.01.054

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Resistively switching materials are in the focus of investigations for use in next-generation non-volatile resistive random access memories (RRAM). Crossbar structures with integrated resistively switching spin-on glass were fabricated using UV nanoimprint lithography. 32 x 32 bit crossbar arrays with a half pitch of 50 nm were achieved. The switching characteristic of our Pt/spin-on glass/Ag material stack was proved on 100 x 100 nm(2) nanocells. It shows resistance switching behavior which is comparable to material systems where the formation and dissolution of metallic filaments through a porous matrix is assumed to be the responsible switching mechanism. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：1060 / 1062

页数：3

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