Self-heating effects in polycrystalline silicon thin film transistors

被引：11

作者：

Valletta, Antonio ^{[1
]}

Moroni, Alessandro ^{[1
]}

Mariucci, Luigi ^{[1
]}

Bonfiglietti, Alessandra ^{[1
]}

Fortunato, Guglielmo ^{[1
]}

机构：

[1] CNR, IFN, I-00156 Rome, Italy

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 09期

关键词：

D O I：

10.1063/1.2337108

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Self-heating effects are investigated in polycrystalline silicon thin film transistors by combining experimental measurements and two-dimensional numerical simulations. From the thermodynamic model the temperature distribution was extracted and found rather uniform along the channel. This allowed the authors to introduce a simplified method to determine the channel temperature when the device is affected by self-heating effects. (c) 2006 American Institute of Physics.

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页数：3

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