Formation of GaN self-organized nanotips by nanomasking effect

被引：0

作者：

Yoshida, H ^{[1
]}

Urushido, T ^{[1
]}

Miyake, H ^{[1
]}

Hiramtsu, K ^{[1
]}

机构：

[1] Mie Univ, Fac Engn, Dept Elect & Elect Engn, Tsu, Mie 5148507, Japan

来源：

GAN AND RELATED ALLOYS-2001 | 2002年 / 693卷

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have successfully fabricated self-organized GaN nanotips by reactive ion etching using chlorine plasma, and have revealed the formation mechanism. Nanotips with a high density and a high aspect ratio have been formed after the etching. We deduce from X-ray photoelectron spectroscopy (XPS) analysis that the nanotip formation is attributed to nanometer-scale masks of SiO2 on GaN. The structures calculated by Monte Carlo simulation of our formation mechanism are very similar to the experimental nanotip structures,

引用

页码：239 / 244

页数：4

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