RF MEMS CAPACITIVE TYPE SHUNT SWITCH

被引：0
|
作者：
De, Debajit [1 ]
Chattoraj, Neela [1 ]
机构：
[1] Birla Inst Technol, Dept Elect Commun Engn, Ranchi, Bihar, India
来源：
2013 IEEE APPLIED ELECTROMAGNETICS CONFERENCE (AEMC) | 2013年
关键词：
RF MEMS Switch; Return Loss; Insertion Loss; Isolation; ON and OFF State; Actuation Voltage;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This article details about the design of a RF MEMS Capacitive Type Shunt Switch. This switch has been designed in High Frequency Structure Simulator (HFSS) & the important Radio Frequency characteristics have been studied in this paper. The electromagnetic behavior of this switch which is obtained from the simulation result is satisfactory. This Switch operates perfectly for microwave frequency band (1-40 GHz) applications.
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页数：2
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