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Patterning technology for solution-processed organic crystal field-effect transistors
被引:45
作者:
Li, Yun
[1
,2
,3
]
Sun, Huabin
[1
,2
]
Shi, Yi
[1
,2
]
Tsukagoshi, Kazuhito
[3
]
机构:
[1] Nanjing Univ, Sch Elect Sci & Engn, Nanjing 210093, Jiangsu, Peoples R China
[2] Nanjing Univ, Jiangsu Prov Key Lab Photon & Elect Mat, Nanjing 210093, Jiangsu, Peoples R China
[3] Natl Inst Mat Sci, Int Ctr Mat Nanoarchitectron WPI MANA, Tsukuba, Ibaraki 3050044, Japan
关键词:
solution-assisted processes;
organic crystals;
patterning;
organic filed-effect transistors;
THIN-FILM TRANSISTORS;
VERTICAL-PHASE-SEPARATION;
N-TYPE TRANSISTORS;
HIGH-PERFORMANCE;
SINGLE-CRYSTALS;
LARGE-AREA;
CHARGE-TRANSPORT;
CONTACT RESISTANCE;
EFFECT MOBILITY;
TRIISOPROPYLSILYLETHYNYL PENTACENE;
D O I:
10.1088/1468-6996/15/2/024203
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
Organic field-effect transistors (OFETs) are fundamental building blocks for various state-of-theart electronic devices. Solution-processed organic crystals are appreciable materials for these applications because they facilitate large-scale, low-cost fabrication of devices with high performance. Patterning organic crystal transistors into well-defined geometric features is necessary to develop these crystals into practical semiconductors. This review provides an update on recent development in patterning technology for solution-processed organic crystals and their applications in field-effect transistors. Typical demonstrations are discussed and examined. In particular, our latest research progress on the spin-coating technique from mixture solutions is presented as a promising method to efficiently produce large organic semiconducting crystals on various substrates for high-performance OFETs. This solution-based process also has other excellent advantages, such as phase separation for self-assembled interfaces via one-step spin-coating, self-flattening of rough interfaces, and in situ purification that eliminates the impurity influences. Furthermore, recommendations for future perspectives are presented, and key issues for further development are discussed.
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页数:25
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