Patterning technology for solution-processed organic crystal field-effect transistors

被引:45
作者
Li, Yun [1 ,2 ,3 ]
Sun, Huabin [1 ,2 ]
Shi, Yi [1 ,2 ]
Tsukagoshi, Kazuhito [3 ]
机构
[1] Nanjing Univ, Sch Elect Sci & Engn, Nanjing 210093, Jiangsu, Peoples R China
[2] Nanjing Univ, Jiangsu Prov Key Lab Photon & Elect Mat, Nanjing 210093, Jiangsu, Peoples R China
[3] Natl Inst Mat Sci, Int Ctr Mat Nanoarchitectron WPI MANA, Tsukuba, Ibaraki 3050044, Japan
关键词
solution-assisted processes; organic crystals; patterning; organic filed-effect transistors; THIN-FILM TRANSISTORS; VERTICAL-PHASE-SEPARATION; N-TYPE TRANSISTORS; HIGH-PERFORMANCE; SINGLE-CRYSTALS; LARGE-AREA; CHARGE-TRANSPORT; CONTACT RESISTANCE; EFFECT MOBILITY; TRIISOPROPYLSILYLETHYNYL PENTACENE;
D O I
10.1088/1468-6996/15/2/024203
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Organic field-effect transistors (OFETs) are fundamental building blocks for various state-of-theart electronic devices. Solution-processed organic crystals are appreciable materials for these applications because they facilitate large-scale, low-cost fabrication of devices with high performance. Patterning organic crystal transistors into well-defined geometric features is necessary to develop these crystals into practical semiconductors. This review provides an update on recent development in patterning technology for solution-processed organic crystals and their applications in field-effect transistors. Typical demonstrations are discussed and examined. In particular, our latest research progress on the spin-coating technique from mixture solutions is presented as a promising method to efficiently produce large organic semiconducting crystals on various substrates for high-performance OFETs. This solution-based process also has other excellent advantages, such as phase separation for self-assembled interfaces via one-step spin-coating, self-flattening of rough interfaces, and in situ purification that eliminates the impurity influences. Furthermore, recommendations for future perspectives are presented, and key issues for further development are discussed.
引用
收藏
页数:25
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