Ab initio-based approach to structural change of compound semiconductor surfaces during MBE growth

Phase diagrams of GaAs and GaN surfaces are systematically investigated by using our ab initio-based approach in conjunction with molecular beam epitaxy (MBE). The phase diagrams are obtained as a function of growth parameters such as temperature and beam equivalent pressure (BEP). The versatility of our approach is exemplified by the phase diagram calculations for GaAs(001) surfaces, where the stable phases and those phase boundaries are successfully determined as functions of temperature and As-2 and As-4 BEPs. The initial growth processes are clarified by the phase diagram calculations for GaAs(111)B-(2 x 2). The calculated results demonstrate that the As-trimer desorption on the GaAs(111)B-(2 x 2) with Ga adatoms occurs beyond 500-700 K while the desorption without Ga adatoms does beyond 800-1000 K. This self-surfactant effect induced by Ga adsorption crucially affects the initial growth of GaAs on the GaAs(111)B-(2 x 2). Furthermore, the phase diagram calculations for GaN(0001) suggests that Ga adsorption or desorption during GaN MBE growth can easily change the pseudo-(1 x 1) to the (2 x 2)-Ga via newly found (1 x 1) and vice versa. On the basis of this finding, the possibility of ghost island formation during MBE growth is discussed. (c) 2008 Elsevier B.V. All rights reserved.