Self heating in Si0.5Ge0.5/Si and GaAs/Si thin film device structures

被引：0

作者：

Zheng, H. ^{[1
]}

Jagannadham, K. ^{[1
]}

机构：

[1] N Carolina State Univ, Raleigh, NC 27695 USA

来源：

SOLID-STATE ELECTRONICS | 2014年 / 99卷

关键词：

SiGe; GaAs; Si; Thin films; Interface thermal conductance; Self heating; THERMAL-CONDUCTIVITY; SUPERLATTICES; RESISTANCE; SIGEHBTS; MOSFETS;

D O I：

10.1016/j.sse.2014.05.008

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Si0.5Ge0.5 and GaAs films grown on Si substrates were used to measure the interface thermal conductance between the films and the substrate. Transient thermoreflectance technique was used with the one-dimensional heat equation to simulate the experimental results. The results showed that the interface thermal conductance of SiGe/Si interface is 100 MW m(-2) K-1 and that of GaAs/Si is 20 MW m(-2) K-1. These values of interface thermal conductance combined with the thermal conductivity of the films were used to conclude that SiGe films are less susceptible to self heating than GaAs films of same thickness. (C) 2014 Elsevier Ltd. All rights reserved.

引用

页码：41 / 44

页数：4

共 27 条

[21]

Storr H, 1954, Z ANORG ALLG CHEM, V241, P305

[22] THERMAL-BOUNDARY RESISTANCE [J].