Conspicuous current dependence of the emission energy from InxGa1-xN/GaN quantum well diodes

被引：11

作者：

Biswas, Dipankar ^{[1
]}

Panda, Siddhartha ^{[1
]}

机构：

[1] Univ Calcutta, Inst Radiophys & Elect, Kolkata 700009, India

来源：

OPTIK | 2016年 / 127卷 / 03期

关键词：

Light emitting diode; Quantum well; Current density; Piezoelectric field; MACROSCOPIC POLARIZATION;

D O I：

10.1016/j.ijleo.2015.10.173

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The emission spectrum of the conventional InGaN/GaN quantum well (QW) diode changes remarkably with the operating current. The degree of change depends on the constituent parameters of the QW. A detailed investigation has been carried out through the self-consistent solutions of the Schradinger and Poisson equations to elucidate the change of the emission energy and the transition probability with the operating current and to explore how the changes depend on the well width of the QW and the In mole fraction. It is found that choosing suitable values of the mentioned parameters, the emission energy may be kept almost constant with current, or it may be tuned over a wide range through current. The two possibilities have immense importance for optoelectronic device applications. (C) 2015 Elsevier GmbH. All rights reserved.

引用

页码：1345 / 1348

页数：4

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