Transient lateral photovoltaic effect in patterned metal-oxide-semiconductor films

被引：25

作者：

Cascales, J. P. ^{[1
,2
]}

Martinez, I. ^{[1
,2
]}

Diaz, D. ^{[1
,2
]}

Rodrigo, J. A. ^{[3
]}

Aliev, F. G. ^{[1
,2
]}

机构：

[1] Univ Autonoma Madrid, Inst Nicolas Cabrera INC, Dpto Fis Mat Condensada C 3, E-28049 Madrid, Spain

[2] Univ Autonoma Madrid, Condensed Matter Phys Inst IFIMAC, E-28049 Madrid, Spain

[3] Univ Complutense Madrid, Fac Ciencias Fis, E-28040 Madrid, Spain

来源：

APPLIED PHYSICS LETTERS | 2014年 / 104卷 / 23期

关键词：

SILICON; SURFACE;

D O I：

10.1063/1.4882701

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The time dependent transient lateral photovoltaic effect has been studied with mu s time resolution and with chopping frequencies in the kHz range, in lithographically patterned 21nm thick, 5, 10, and 20 mu m wide, and 1500 mu m long Co lines grown over naturally passivated p-type Si (100). We have observed a nearly linear dependence of the transitorial response with the laser spot position. A transitorial response with a sign change in the laser-off stage has been corroborated by numerical simulations. A qualitative explanation suggests a modification of the drift-diffusion model by including the influence of a local inductance. Our findings indicate that the microstructuring of position sensitive detectors could improve their space-time resolution. (C) 2014 AIP Publishing LLC.

引用

页数：4

共 19 条

[1]

[Anonymous], 2014, APPL PHYS LETT, V104

[2] LATERAL PHOTOVOLTAIC EFFECT IN POROUS SILICON [J].

BOERINGER, DW ;

TSU, R .

APPLIED PHYSICS LETTERS, 1994, 65 (18) :2332-2334

[3] Origin of the training effect and asymmetry of the magnetization in polycrystalline exchange bias systems [J].

Brems, Steven ;

Temst, Kristiaan ;

Van Haesendonck, Chris .

PHYSICAL REVIEW LETTERS, 2007, 99 (06)

[4]

DHARIWAL SR, 1976, J PHYS D APPL PHYS, V9, P631, DOI 10.1088/0022-3727/9/4/014

[5] Anomalous low-frequency noise in synthetic antiferromagnets: Possible evidence of current-induced domain-wall motion [J].

Herranz, D. ;

Guerrero, R. ;

Villar, R. ;

Aliev, F. G. ;

Swaving, A. C. ;

Duine, R. A. ;

van Haesendonck, C. ;

Vavra, I. .

PHYSICAL REVIEW B, 2009, 79 (13)

[6] High Dynamics and Precision Optical Measurement Using a Position Sensitive Detector (PSD) in Reflection-Mode: Application to 2D Object Tracking over a Smart Surface [J].

Ivan, Ioan Alexandru ;

Ardeleanu, Mihaita Nicolae ;

Laurent, Guillaume J. .

SENSORS, 2012, 12 (12) :16771-16784

[7] Near Infrared Lateral Photovoltaic Effect in LaTiO3 Films [J].

Jin, Wujun ;

Zhang, Shasha ;

Ni, Hao ;

Xiang, Wenfeng ;

Xi, Jianfeng ;

Feng, Xin ;

Zhao, Kun .

INTERNATIONAL JOURNAL OF PHOTOENERGY, 2013, 2013

[8] Model for Studies of Lateral Photovoltaic Effect in Polymeric Semiconductors [J].

Kabra, Dinesh ;

Verma, J. ;

Vidhyadhiraja, N. S. ;

Narayan, K. S. .

IEEE SENSORS JOURNAL, 2008, 8 (9-10) :1663-1671

[9] Integrated properties of large lateral photovoltage and positive magnetoresistance in Co/Mn/Co/c-Si structures [J].

Kong, L. Z. ;

Wang, H. ;

Xiao, S. Q. ;

Lu, J. J. ;

Xia, Y. X. ;

Hu, G. J. ;

Dai, N. ;

Wang, Z. H. .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2008, 41 (05)

[10] Surface photovoltage phenomena: theory, experiment, and applications [J].

Kronik, L ;

Shapira, Y .

SURFACE SCIENCE REPORTS, 1999, 37 (1-5) :1-206

← 1 2 →