Tri-Resistive Switching Behavior of Hydrogen Induced Resistance Random Access Memory

被引：25

作者：

Chu, Tian-Jian ^{[1
]}

Tsai, Tsung-Ming ^{[1
]}

Chang, Ting-Chang ^{[2
,3
]}

Chang, Kuan-Chang ^{[1
]}

Zhang, Rui ^{[4
]}

Chen, Kai-Huang ^{[5
]}

Chen, Jung-Hui ^{[6
]}

Young, Tai-Fa ^{[7
]}

Huang, Jen-Wei ^{[8
]}

Lou, Jen-Chung ^{[4
]}

Chen, Min-Chen ^{[2
,3
]}

Huang, Syuan-Yong ^{[1
]}

Chen, Hsin-Lu ^{[7
]}

Syu, Yong-En ^{[2
,3
]}

Bao, Dinghua ^{[9
]}

Sze, Simon M. ^{[10
]}

机构：

[1] Natl Sun Yat Sen Univ, Dept Mat & Optoelect Sci, Kaohsiung 804, Taiwan

[2] Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung 804, Taiwan

[3] Natl Cheng Kung Univ, Adv Optoelect Technol Ctr, Tainan 701, Taiwan

[4] Peking Univ, Sch Software & Microelect, Beijing 100871, Peoples R China

[5] Tung Fang Design Inst, Dept Elect Engn & Comp Sci, Kaohsiung 829, Taiwan

[6] Natl Kaohsiung Normal Univ, Dept Chem, Kaohsiung 804, Taiwan

[7] Natl Sun Yat Sen Univ, Dept Mech & Electromech Engn, Kaohsiung 804, Taiwan

[8] ROC Mil Acad, Dept Phys, Kaohsiung 83055, Taiwan

[9] Sun Yat Sen Univ, Sch Phys & Engn, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China

[10] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 2014年 / 35卷 / 02期

关键词：

RRAM; hydrogen; resistive switching; tri-resistive states; HOPPING CONDUCTION; ORIGIN; RRAM;

D O I：

10.1109/LED.2013.2295378

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, the special role of hydrogen ions in hafnium doped silicon oxide resistive random access memory (RRAM) is presented. In addition to the more typical oxygen ion-dominated resistive switching, hydrogen ions were also observed to trigger a resistance transformation phenomenon, producing a tri-resistive device. Unlike a normal RRAM device, a hydrogen plasma-treated device is operated with a reversed voltage polarity, and the direction of hydrogen ion migration results in the chemical bonds breaking and repairing. By changing the voltage polarity and stop voltage, this tri-resistive behavior can be achieved. This particular hydrogen-induced switching behavior suggests a different RRAM switching mechanism and is finally explained by our model.

引用

页码：217 / 219

页数：3

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