Effect of dimethylhydrazine on p-type conductivity of as-grown Mg-doped GaN

被引：0

作者：

Kim, Dong Hyuk ^{[1
]}

Lee, Go Eun ^{[1
]}

Yoon, Euijoon ^{[1
]}

Park, Do-Young ^{[2
]}

Cheong, Hyeonsik ^{[2
]}

Choi, Woo Seok ^{[3
,4
]}

Noh, Tae Won ^{[3
,4
]}

Cho, Jin-Hyoung ^{[5
]}

Park, Joong-Seo ^{[5
]}

机构：

[1] Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 151742, South Korea

[2] Sogang Univ, Dept Phys, Seoul 121742, South Korea

[3] Seoul Natl Univ, Dept Phys & Astron, ReCOE, Seoul 151747, South Korea

[4] Seoul Natl Univ, Dept Phys & Astron, FPRD, Seoul 151747, South Korea

[5] EpiValley Co Ltd, Gumi, KyeongSangBuk D, South Korea

来源：

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2009年 / 3卷 / 2-3期

关键词：

HYDROGEN; CARBON; COMPLEXES; GAAS;

D O I：

10.1002/pssr.200802255

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Mg dopants in GaN need post-growth thermal activation to be activated. However, it was observed that GaN growth with dimethylhydrazine (DMHy) resulted in p-type conductivity without activation. The reduction of NH3 flow by adding DMHy resulted in a vary low hydrogen concentration of 2.8 x 10(17) cm(-3) in Mg-doped GaN, which was even lower than the hole concentration. The low-temperature infrared transmittance spectra also showed that many hydrogen atoms were captured by incorporated carbon impurities. the combined effect of low concentration of hydrogen at carbon impurities is attributed to the p-type conductivity of as-grown Mg-doped GaN when a maximum of DMHy and NH3 was used for group V sources. (C) 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：52 / 54

页数：3

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