Preparation and characterization of MOCVD thin films of indium tin oxide

被引：23
作者：
Akinwunmi, OO [1 ]
Eleruja, MA
Olowolafe, JO
Adegboyega, GA
Ajayi, EOB
机构：
[1] Obafemi Awolowo Univ, Dept Phys, Ile Ife, Nigeria
[2] Univ Delaware, Dept Elect Engn, Newark, DE 19901 USA
[3] Obafemi Awolowo Univ, Dept Elect & Elect Engn, Ile Ife, Nigeria
来源：
OPTICAL MATERIALS | 1999年 / 13卷 / 02期
关键词：
D O I：
10.1016/S0925-3467(98)00089-5
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Indium Tin Oxide (ITO) was deposited by pyrolysis of mixed metal acetylacetonate (a single solid-source precursor). This study demonstrates that the properties of the as-deposited film depend on the deposition temperature. Films with a resistivity of 7.2 x 10(-4) Omega cm, a visible transmission of over 80%, and a direct optical energy gap of 3.76 eV were deposited, (C) 1999 Elsevier Science B.V. All rights reserved.
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页码：255 / 259
页数：5
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