Defect structure of a free standing GaN wafer grown by the ammonothermal method

被引：11

作者：

Sintonen, Sakari ^{[1
]}

Suihkonen, Sami ^{[1
]}

Jussila, Henri ^{[1
]}

Lipsanen, Harri ^{[1
]}

Tuomi, Turkka O. ^{[1
]}

Letts, Edward ^{[2
]}

Hoff, Sierra ^{[2
]}

Hashimoto, Tadao ^{[2
]}

机构：

[1] Aalto Univ, Sch Elect Engn, Dept Micro & Nanosci, Espoo 02150, Finland

[2] SixPoint Mat Inc, Buellton, CA 93427 USA

来源：

JOURNAL OF CRYSTAL GROWTH | 2014年 / 406卷

基金：

芬兰科学院;

关键词：

X-ray diffraction; X-ray topography; Defects; Single crystal growth; Growth from solutions; Nitrides; X-RAY-DIFFRACTION; SYNCHROTRON-RADIATION; DISLOCATION CONTRAST; BULK GAN; TOPOGRAPHY;

D O I：

10.1016/j.jcrysgro.2014.08.022

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

White beam synchrotron radiation X-ray topography (SR-XRT) and X-ray diffraction (XRD) measurements were used to non-destructively study the defect structure of a bulk GaN wafer, grown by the ammonothermal method. SR-XRT topographs revealed high crystal quality with threading dislocation density 8.8 x 10(4) cm(-2) and granular structure consisting of large, slightly misaligned grains. The threading dislocations within grains were identified as mixed and screw type, while no pure threading edge dislocations were observed. (C) 2014 Elsevier By. All rights reserved.

引用

页码：72 / 77

页数：6

共 50 条

[41] Electronic and optical characteristics of an m-plane GaN single crystal grown by hydride vapor phase epitaxy on a GaN seed synthesized by the ammonothermal method using an acidic mineralizer
Kojima, Kazunobu
Tsukada, Yusuke
Furukawa, Erika
Saito, Makoto
Mikawa, Yutaka
Kubo, Shuichi
Ikeda, Hirotaka
Fujito, Kenji
Uedono, Akira
Chichibu, Shigefusa F.
JAPANESE JOURNAL OF APPLIED PHYSICS, 2016, 55 (05)
[42] Strain controlled growth of crack-free GaN with low defect density on silicon (111) substrate
Drechsel, P.
Riechert, H.
JOURNAL OF CRYSTAL GROWTH, 2011, 315 (01) : 211 - 215
[43] Investigation of surface defect structure originating in dislocations in AlGaN/GaN epitaxial layer grown on a Si substrate
Sasaki, Hitoshi
Kato, Sadahiro
Matsuda, Takeyoshi
Sato, Yoshihiro
Iwami, Masayuki
Yoshida, Seikoh
JOURNAL OF CRYSTAL GROWTH, 2007, 298 : 305 - 309
[44] Defect-Related Luminescence in Undoped GaN Grown by HVPE
M.A. Reshchikov
A. Usikov
H. Helava
Yu. Makarov
Journal of Electronic Materials, 2015, 44 : 1281 - 1286
[45] Modulated beam growth method for MBE grown GaN layers
Liu, KT
Tezuka, T
Sugita, S
Watari, Y
Horikoshi, Y
Su, YK
Chang, SJ
JOURNAL OF CRYSTAL GROWTH, 2004, 263 (1-4) : 400 - 405
[46] Defect-Related Luminescence in Undoped GaN Grown by HVPE
Reshchikov, M. A.
Usikov, A.
Helava, H.
Makarov, Yu.
JOURNAL OF ELECTRONIC MATERIALS, 2015, 44 (05) : 1281 - 1286
[47] Synchrotron Diffraction topography in Studying of the Defect Structure in Crystals Grown by the Czochralski Method
Wierzchowski, W.
Wieteska, K.
Malinowska, A.
Wierzbicka, E.
Lefeld-Sosnowska, M.
Swirkowicz, M.
Lukasiewicz, T.
Pajaczkowska, A.
Paulmann, C.
ACTA PHYSICA POLONICA A, 2013, 124 (02) : 350 - 359
[48] Structure and optical properties of MOVPE and HVPE GaN films grown on GaN nanocrystalline powder substrate
Nyk, M
Kudrawiec, R
Misiewicz, J
Paszkiewicz, R
Korbutowicz, R
Kozlowski, J
Serafinczuk, J
Strek, W
JOURNAL OF CRYSTAL GROWTH, 2005, 277 (1-4) : 149 - 153
[49] Optimization of GaN wafer bow grown on cone shaped patterned sapphire substrates
Wang, Mei-Tan
Brunner, Frank
Liao, Kuan-Yung
Li, Yun-Li
Tseng, Snow H.
Weyers, Markus
JOURNAL OF CRYSTAL GROWTH, 2013, 363 : 109 - 112
[50] Characterization of crystal lattice constant and dislocation density of crack-free GaN films grown on Si(111)
Xiong, Jijun
Tang, Jianjun
Liang, Ting
Wang, Yong
Xue, Chenyang
Shi, Weili
Zhang, Wendong
APPLIED SURFACE SCIENCE, 2010, 257 (04) : 1161 - 1165

← 1 2 3 4 5 →